ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect

Joondong Kim; Ju Hyung Yun; Chang Hyun Kim; Yun Chang Park; Ju Yeon Woo; Jeunghee Park; Jung Ho Lee; Junsin Yi; Chang Soo Han

doi:10.1088/0957-4484/21/11/115205

ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect

Joondong Kim
, Ju Hyung Yun
, Chang Hyun Kim
, Yun Chang Park
, Ju Yeon Woo
, Jeunghee Park
, Jung Ho Lee
, Junsin Yi
, Chang Soo Han

Department of Electronic and Electrical Engineering

Korea Institute of Machinery and Materials
Korea University
National NanoFab Center
Hanyang University

Research output: Contribution to journal › Article › peer-review

82 Scopus citations

Abstract

A zinc oxide nanowire(ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.

Original language	English
Article number	115205
Journal	Nanotechnology
Volume	21
Issue number	11
DOIs	https://doi.org/10.1088/0957-4484/21/11/115205
State	Published - 2010

Access to Document

10.1088/0957-4484/21/11/115205

Cite this

@article{ef49b61b63374a50a4e2ea050230dc1f,

title = "ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect",

abstract = "A zinc oxide nanowire(ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.",

author = "Joondong Kim and Yun, \{Ju Hyung\} and Kim, \{Chang Hyun\} and Park, \{Yun Chang\} and Woo, \{Ju Yeon\} and Jeunghee Park and Lee, \{Jung Ho\} and Junsin Yi and Han, \{Chang Soo\}",

year = "2010",

doi = "10.1088/0957-4484/21/11/115205",

language = "English",

volume = "21",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "11",

}

TY - JOUR

T1 - ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect

AU - Kim, Joondong

AU - Yun, Ju Hyung

AU - Kim, Chang Hyun

AU - Park, Yun Chang

AU - Woo, Ju Yeon

AU - Park, Jeunghee

AU - Lee, Jung Ho

AU - Yi, Junsin

AU - Han, Chang Soo

PY - 2010

Y1 - 2010

N2 - A zinc oxide nanowire(ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.

AB - A zinc oxide nanowire(ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.

UR - https://www.scopus.com/pages/publications/77349099734

U2 - 10.1088/0957-4484/21/11/115205

DO - 10.1088/0957-4484/21/11/115205

M3 - Article

AN - SCOPUS:77349099734

SN - 0957-4484

VL - 21

JO - Nanotechnology

JF - Nanotechnology

IS - 11

M1 - 115205

ER -

ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect

Abstract

Access to Document

Other files and links

Fingerprint

Cite this