Zinc-tin-oxide thin-film transistors and circuits by ink-jet printing

  • Yong Hoon Kim
  • , Min Suk Oh
  • , Kwang Ho Kim
  • , Hyun Jae Kim
  • , Min Koo Han
  • , Sung Kyu Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

High performance amorphous zinc-tin-oxide (a-ZTO) thin film transistors (TFTs) and simple inverter circuits have been developed by using ink-jet printing and rapid thermal annealing (RTA) process. It was found that the substrate heating during ink-jet process had significant influence on ZTO channel morphology and the electrical properties. The TFT devices with a-ZTO layer printed at 50°C showed the best electrical performance (μ=4.98 cm2/Vs, Ion/off=109). Also, a-ZTO TFT based inverter was fabricated with acceptable logic level conservation.

Original languageEnglish
Title of host publication10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages480-481
Number of pages2
StatePublished - 2010
Externally publishedYes
Event10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of
Duration: 11 Oct 201015 Oct 2010

Publication series

NameProceedings of International Meeting on Information Display
ISSN (Print)1738-7558

Conference

Conference10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Country/TerritoryKorea, Republic of
CitySeoul
Period11/10/1015/10/10

Keywords

  • Ink-jet printing
  • Inverter
  • Substrate temperature
  • Zinc-tin-oxide

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