WSe2Field-effect Transistor with Electron-beam-induced W-shaped IV Characteristic and its Application to a Ternary NAND Gate

Maksim Andreev; Juncheol Kang; Taeran Lee; Jin Hong Park

doi:10.1109/EDTM55494.2023.10103021

WSe₂Field-effect Transistor with Electron-beam-induced W-shaped IV Characteristic and its Application to a Ternary NAND Gate

Maksim Andreev
, Juncheol Kang
, Taeran Lee
, Jin Hong Park

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report WSe2 homojunction-based field-effect transistors (FETs) with W-shaped transfer IV characteristics, enabled by area-selective tailoring of the WSe2 channel work function with the electron-beam treatment. We demonstrate that FETs with such IV curves are suitable for the implementation of the two-input ternary NAND logic gate, one of the essential building blocks required for the realization of a functionally complete set of logic gates in ternary logic.

Original language	English
Title of host publication	7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10103021
State	Published - 2023
Externally published	Yes
Event	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: 7 Mar 2023 → 10 Mar 2023

Publication series

Name	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/Territory	Korea, Republic of
City	Seoul
Period	7/03/23 → 10/03/23

Keywords

ambipolar conductivity
electron beam
multi-valued logic
ternary logic
transition metal dichalcogenides
WSe

Access to Document

10.1109/EDTM55494.2023.10103021

Cite this

Andreev, M., Kang, J., Lee, T., & Park, J. H. (2023). WSe₂Field-effect Transistor with Electron-beam-induced W-shaped IV Characteristic and its Application to a Ternary NAND Gate. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10103021

Andreev, Maksim ; Kang, Juncheol ; Lee, Taeran et al. / WSe₂Field-effect Transistor with Electron-beam-induced W-shaped IV Characteristic and its Application to a Ternary NAND Gate. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

@inproceedings{8d986992266d4f838aae90ba28968ac6,

title = "WSe2Field-effect Transistor with Electron-beam-induced W-shaped IV Characteristic and its Application to a Ternary NAND Gate",

abstract = "We report WSe2 homojunction-based field-effect transistors (FETs) with W-shaped transfer IV characteristics, enabled by area-selective tailoring of the WSe2 channel work function with the electron-beam treatment. We demonstrate that FETs with such IV curves are suitable for the implementation of the two-input ternary NAND logic gate, one of the essential building blocks required for the realization of a functionally complete set of logic gates in ternary logic.",

keywords = "ambipolar conductivity, electron beam, multi-valued logic, ternary logic, transition metal dichalcogenides, WSe",

author = "Maksim Andreev and Juncheol Kang and Taeran Lee and Park, \{Jin Hong\}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",

year = "2023",

doi = "10.1109/EDTM55494.2023.10103021",

language = "English",

series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",

}

Andreev, M, Kang, J, Lee, T & Park, JH 2023, WSe₂Field-effect Transistor with Electron-beam-induced W-shaped IV Characteristic and its Application to a Ternary NAND Gate. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, Korea, Republic of, 7/03/23. https://doi.org/10.1109/EDTM55494.2023.10103021

WSe₂Field-effect Transistor with Electron-beam-induced W-shaped IV Characteristic and its Application to a Ternary NAND Gate. / Andreev, Maksim; Kang, Juncheol; Lee, Taeran et al.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - WSe2Field-effect Transistor with Electron-beam-induced W-shaped IV Characteristic and its Application to a Ternary NAND Gate

AU - Andreev, Maksim

AU - Kang, Juncheol

AU - Lee, Taeran

AU - Park, Jin Hong

PY - 2023

Y1 - 2023

N2 - We report WSe2 homojunction-based field-effect transistors (FETs) with W-shaped transfer IV characteristics, enabled by area-selective tailoring of the WSe2 channel work function with the electron-beam treatment. We demonstrate that FETs with such IV curves are suitable for the implementation of the two-input ternary NAND logic gate, one of the essential building blocks required for the realization of a functionally complete set of logic gates in ternary logic.

AB - We report WSe2 homojunction-based field-effect transistors (FETs) with W-shaped transfer IV characteristics, enabled by area-selective tailoring of the WSe2 channel work function with the electron-beam treatment. We demonstrate that FETs with such IV curves are suitable for the implementation of the two-input ternary NAND logic gate, one of the essential building blocks required for the realization of a functionally complete set of logic gates in ternary logic.

KW - ambipolar conductivity

KW - electron beam

KW - multi-valued logic

KW - ternary logic

KW - transition metal dichalcogenides

KW - WSe

UR - https://www.scopus.com/pages/publications/85158158606

U2 - 10.1109/EDTM55494.2023.10103021

DO - 10.1109/EDTM55494.2023.10103021

M3 - Conference contribution

AN - SCOPUS:85158158606

T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

BT - 7th IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023

Y2 - 7 March 2023 through 10 March 2023

ER -

Andreev M, Kang J, Lee T, Park JH. WSe₂Field-effect Transistor with Electron-beam-induced W-shaped IV Characteristic and its Application to a Ternary NAND Gate. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10103021