Wettability conversion of an aluminum-hydroxide nanostructure by ion implantation

Jihoon Jeon; Dukhyun Choi; Hyungdae Kim; Yong Tae Park; Min Jun Choi; Kwun Bum Chung

doi:10.3938/jkps.68.1024

Wettability conversion of an aluminum-hydroxide nanostructure by ion implantation

Jihoon Jeon, Dukhyun Choi, Hyungdae Kim, Yong Tae Park, Min Jun Choi, Kwun Bum Chung

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

This work presents a method for controlling the wettability of an aluminum-hydroxide (Al(OH)₃) nanostructure by using ion implantation. We implant Xe ions into Al(OH)₃ nanostructures at dosages between 5 × 10¹⁴ to 1 × 10¹⁶ ions/cm². The microscopic surface morphology of the nanostructure after implantation does not change under our dosing conditions. However, a drastic increase in the surface contact angle (CA) from 0° to 100° is observed at a dosage of 5 × 10¹⁵ ions/cm². We attribute this significant change in CA to the composition and chemical bonding states of carbon contained within the Al(OH)₃ nanostructure.

Original language	English
Pages (from-to)	1024-1028
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	68
Issue number	8
DOIs	https://doi.org/10.3938/jkps.68.1024
State	Published - 1 Apr 2016
Externally published	Yes

Keywords

Aluminum hydroxide
Contact angle
Ion implantation
X-ray photoelectron spectroscopy
Xe ions

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10.3938/jkps.68.1024

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title = "Wettability conversion of an aluminum-hydroxide nanostructure by ion implantation",

abstract = "This work presents a method for controlling the wettability of an aluminum-hydroxide (Al(OH)3) nanostructure by using ion implantation. We implant Xe ions into Al(OH)3 nanostructures at dosages between 5 × 1014 to 1 × 1016 ions/cm2. The microscopic surface morphology of the nanostructure after implantation does not change under our dosing conditions. However, a drastic increase in the surface contact angle (CA) from 0° to 100° is observed at a dosage of 5 × 1015 ions/cm2. We attribute this significant change in CA to the composition and chemical bonding states of carbon contained within the Al(OH)3 nanostructure.",

keywords = "Aluminum hydroxide, Contact angle, Ion implantation, X-ray photoelectron spectroscopy, Xe ions",

author = "Jihoon Jeon and Dukhyun Choi and Hyungdae Kim and Park, \{Yong Tae\} and Choi, \{Min Jun\} and Chung, \{Kwun Bum\}",

note = "Publisher Copyright: {\textcopyright} 2016, The Korean Physical Society.",

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doi = "10.3938/jkps.68.1024",

language = "English",

volume = "68",

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TY - JOUR

T1 - Wettability conversion of an aluminum-hydroxide nanostructure by ion implantation

AU - Jeon, Jihoon

AU - Choi, Dukhyun

AU - Kim, Hyungdae

AU - Park, Yong Tae

AU - Choi, Min Jun

AU - Chung, Kwun Bum

PY - 2016/4/1

Y1 - 2016/4/1

N2 - This work presents a method for controlling the wettability of an aluminum-hydroxide (Al(OH)3) nanostructure by using ion implantation. We implant Xe ions into Al(OH)3 nanostructures at dosages between 5 × 1014 to 1 × 1016 ions/cm2. The microscopic surface morphology of the nanostructure after implantation does not change under our dosing conditions. However, a drastic increase in the surface contact angle (CA) from 0° to 100° is observed at a dosage of 5 × 1015 ions/cm2. We attribute this significant change in CA to the composition and chemical bonding states of carbon contained within the Al(OH)3 nanostructure.

AB - This work presents a method for controlling the wettability of an aluminum-hydroxide (Al(OH)3) nanostructure by using ion implantation. We implant Xe ions into Al(OH)3 nanostructures at dosages between 5 × 1014 to 1 × 1016 ions/cm2. The microscopic surface morphology of the nanostructure after implantation does not change under our dosing conditions. However, a drastic increase in the surface contact angle (CA) from 0° to 100° is observed at a dosage of 5 × 1015 ions/cm2. We attribute this significant change in CA to the composition and chemical bonding states of carbon contained within the Al(OH)3 nanostructure.

KW - Aluminum hydroxide

KW - Contact angle

KW - Ion implantation

KW - X-ray photoelectron spectroscopy

KW - Xe ions

UR - https://www.scopus.com/pages/publications/84964200224

U2 - 10.3938/jkps.68.1024

DO - 10.3938/jkps.68.1024

M3 - Article

AN - SCOPUS:84964200224

SN - 0374-4884

VL - 68

SP - 1024

EP - 1028

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 8

ER -

Wettability conversion of an aluminum-hydroxide nanostructure by ion implantation

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Keywords

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