Wear leveling for PCM using hot data identification

Inhwan Choi; Dongkun Shin

doi:10.1007/978-94-007-2911-7_12

Wear leveling for PCM using hot data identification

Inhwan Choi, Dongkun Shin

Department of Computer Science and Engineering

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Phase change memory (PCM) is the best candidate device among next generation random access memory technologies. PCM has a potential to replace Flash memory due to non-volatility and in-place programmability, and low power consumption. Even though lifetime of PCM is longer than flash memory, wear leveling is needed because of non-uniformity of storage workload or malicious attack. In this paper, we propose a novel wear leveling algorithm for PCM as storage. Proposed algorithm extended the lifetime maximum 16 times and average 14 times in comparison to Segment Swapping algorithm.

Original language	English
Title of host publication	Proceedings of the International Conference on IT Convergence and Security 2011
Pages	145-149
Number of pages	5
DOIs	https://doi.org/10.1007/978-94-007-2911-7_12
State	Published - 2012
Event	International Conference on IT Convergence and Security 2011, ICITCS 2011 - Suwon, Korea, Republic of Duration: 14 Dec 2011 → 16 Dec 2011

Publication series

Name	Lecture Notes in Electrical Engineering
Volume	120 LNEE
ISSN (Print)	1876-1100
ISSN (Electronic)	1876-1119

Conference

Conference	International Conference on IT Convergence and Security 2011, ICITCS 2011
Country/Territory	Korea, Republic of
City	Suwon
Period	14/12/11 → 16/12/11

Keywords

Nonvolatile memory
Phase change memory
Wear-leveling

Access to Document

10.1007/978-94-007-2911-7_12

Cite this

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title = "Wear leveling for PCM using hot data identification",

abstract = "Phase change memory (PCM) is the best candidate device among next generation random access memory technologies. PCM has a potential to replace Flash memory due to non-volatility and in-place programmability, and low power consumption. Even though lifetime of PCM is longer than flash memory, wear leveling is needed because of non-uniformity of storage workload or malicious attack. In this paper, we propose a novel wear leveling algorithm for PCM as storage. Proposed algorithm extended the lifetime maximum 16 times and average 14 times in comparison to Segment Swapping algorithm.",

keywords = "Nonvolatile memory, Phase change memory, Wear-leveling",

author = "Inhwan Choi and Dongkun Shin",

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doi = "10.1007/978-94-007-2911-7\_12",

language = "English",

isbn = "9789400729100",

series = "Lecture Notes in Electrical Engineering",

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booktitle = "Proceedings of the International Conference on IT Convergence and Security 2011",

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Choi, I & Shin, D 2012, Wear leveling for PCM using hot data identification. in Proceedings of the International Conference on IT Convergence and Security 2011. Lecture Notes in Electrical Engineering, vol. 120 LNEE, pp. 145-149, International Conference on IT Convergence and Security 2011, ICITCS 2011, Suwon, Korea, Republic of, 14/12/11. https://doi.org/10.1007/978-94-007-2911-7_12

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AU - Choi, Inhwan

AU - Shin, Dongkun

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Y1 - 2012

N2 - Phase change memory (PCM) is the best candidate device among next generation random access memory technologies. PCM has a potential to replace Flash memory due to non-volatility and in-place programmability, and low power consumption. Even though lifetime of PCM is longer than flash memory, wear leveling is needed because of non-uniformity of storage workload or malicious attack. In this paper, we propose a novel wear leveling algorithm for PCM as storage. Proposed algorithm extended the lifetime maximum 16 times and average 14 times in comparison to Segment Swapping algorithm.

AB - Phase change memory (PCM) is the best candidate device among next generation random access memory technologies. PCM has a potential to replace Flash memory due to non-volatility and in-place programmability, and low power consumption. Even though lifetime of PCM is longer than flash memory, wear leveling is needed because of non-uniformity of storage workload or malicious attack. In this paper, we propose a novel wear leveling algorithm for PCM as storage. Proposed algorithm extended the lifetime maximum 16 times and average 14 times in comparison to Segment Swapping algorithm.

KW - Nonvolatile memory

KW - Phase change memory

KW - Wear-leveling

UR - https://www.scopus.com/pages/publications/84255177458

U2 - 10.1007/978-94-007-2911-7_12

DO - 10.1007/978-94-007-2911-7_12

M3 - Conference contribution

AN - SCOPUS:84255177458

SN - 9789400729100

T3 - Lecture Notes in Electrical Engineering

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BT - Proceedings of the International Conference on IT Convergence and Security 2011

T2 - International Conference on IT Convergence and Security 2011, ICITCS 2011

Y2 - 14 December 2011 through 16 December 2011

ER -

Wear leveling for PCM using hot data identification

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Keywords

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