Versatile Hole Carrier Selective MoO                         x                          Contact for High Efficiency Silicon Heterojunction Solar Cells: A Review

Shahzada Qamar Hussain; Kumar Mallem; Muhammad Ali Khan; Muhammad Quddamah Khokhar; Youngseok Lee; Jinjoo Park; Kyung Su Lee; Youngkuk Kim; Eun Chel Cho; Young Hyun Cho; Junsin Yi

doi:10.1007/s42341-018-00089-0

Versatile Hole Carrier Selective MoO _x Contact for High Efficiency Silicon Heterojunction Solar Cells: A Review

Shahzada Qamar Hussain, Kumar Mallem, Muhammad Ali Khan, Muhammad Quddamah Khokhar, Youngseok Lee, Jinjoo Park, Kyung Su Lee, Youngkuk Kim, Eun Chel Cho, Young Hyun Cho, Junsin Yi

Research output: Contribution to journal › Review article › peer-review

9 Scopus citations

Abstract

Excellent surface passivation and carrier selective contact formed by the metal oxide induced junctions is required for future high efficiency silicon solar cells. Due to wide optical bandgap and high work function of molybdenum oxide (MoO _x , x < 3) films envisioned as a superior hole selective layer in organic light emitting diodes and photovoltaics applications. We have studied the influence of ultrathin MoO _x layer, as a hole-selective contact for high efficiency of silicon heterojunction (SHJ) solar cell. MoO _x films can be deposited by atomic layer deposition, magnetron sputtering and thermal evaporation. Due to higher work function of MoO _x films, a potential barrier can develop against electrons while it supports the hole carriers flow hence current density of SHJ solar cells can be enhanced. A summary of single layer and solar cell characteristics of MoO _x layer for the application of carrier selective contact and dopant-free asymmetric heterocontact (DASH) solar cells is reported.

Original language	English
Journal	Transactions on Electrical and Electronic Materials
Volume	20
Issue number	1
DOIs	https://doi.org/10.1007/s42341-018-00089-0
State	Published - 11 Feb 2019

Keywords

High work function
Hole selective carrier contact
Molybdenum oxide
Silicon heterojunction solar cell
XPS analysis

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1007/s42341-018-00089-0

Cite this

Hussain, S. Q., Mallem, K., Khan, M. A., Khokhar, M. Q., Lee, Y., Park, J., Lee, K. S., Kim, Y., Cho, E. C., Cho, Y. H., & Yi, J. (2019). Versatile Hole Carrier Selective MoO _x Contact for High Efficiency Silicon Heterojunction Solar Cells: A Review. Transactions on Electrical and Electronic Materials, 20(1). https://doi.org/10.1007/s42341-018-00089-0

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title = "Versatile Hole Carrier Selective MoO x Contact for High Efficiency Silicon Heterojunction Solar Cells: A Review",

abstract = " Excellent surface passivation and carrier selective contact formed by the metal oxide induced junctions is required for future high efficiency silicon solar cells. Due to wide optical bandgap and high work function of molybdenum oxide (MoO x , x < 3) films envisioned as a superior hole selective layer in organic light emitting diodes and photovoltaics applications. We have studied the influence of ultrathin MoO x layer, as a hole-selective contact for high efficiency of silicon heterojunction (SHJ) solar cell. MoO x films can be deposited by atomic layer deposition, magnetron sputtering and thermal evaporation. Due to higher work function of MoO x films, a potential barrier can develop against electrons while it supports the hole carriers flow hence current density of SHJ solar cells can be enhanced. A summary of single layer and solar cell characteristics of MoO x layer for the application of carrier selective contact and dopant-free asymmetric heterocontact (DASH) solar cells is reported.",

keywords = "High work function, Hole selective carrier contact, Molybdenum oxide, Silicon heterojunction solar cell, XPS analysis",

author = "Hussain, \{Shahzada Qamar\} and Kumar Mallem and Khan, \{Muhammad Ali\} and Khokhar, \{Muhammad Quddamah\} and Youngseok Lee and Jinjoo Park and Lee, \{Kyung Su\} and Youngkuk Kim and Cho, \{Eun Chel\} and Cho, \{Young Hyun\} and Junsin Yi",

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year = "2019",

month = feb,

day = "11",

doi = "10.1007/s42341-018-00089-0",

language = "English",

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Hussain, SQ, Mallem, K, Khan, MA, Khokhar, MQ, Lee, Y, Park, J, Lee, KS, Kim, Y, Cho, EC, Cho, YH & Yi, J 2019, 'Versatile Hole Carrier Selective MoO _x Contact for High Efficiency Silicon Heterojunction Solar Cells: A Review', Transactions on Electrical and Electronic Materials, vol. 20, no. 1. https://doi.org/10.1007/s42341-018-00089-0

Versatile Hole Carrier Selective MoO _x Contact for High Efficiency Silicon Heterojunction Solar Cells: A Review. / Hussain, Shahzada Qamar; Mallem, Kumar; Khan, Muhammad Ali et al.
In: Transactions on Electrical and Electronic Materials, Vol. 20, No. 1, 11.02.2019.

Research output: Contribution to journal › Review article › peer-review

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AU - Hussain, Shahzada Qamar

AU - Mallem, Kumar

AU - Khan, Muhammad Ali

AU - Khokhar, Muhammad Quddamah

AU - Lee, Youngseok

AU - Park, Jinjoo

AU - Lee, Kyung Su

AU - Kim, Youngkuk

AU - Cho, Eun Chel

AU - Cho, Young Hyun

AU - Yi, Junsin

PY - 2019/2/11

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N2 - Excellent surface passivation and carrier selective contact formed by the metal oxide induced junctions is required for future high efficiency silicon solar cells. Due to wide optical bandgap and high work function of molybdenum oxide (MoO x , x < 3) films envisioned as a superior hole selective layer in organic light emitting diodes and photovoltaics applications. We have studied the influence of ultrathin MoO x layer, as a hole-selective contact for high efficiency of silicon heterojunction (SHJ) solar cell. MoO x films can be deposited by atomic layer deposition, magnetron sputtering and thermal evaporation. Due to higher work function of MoO x films, a potential barrier can develop against electrons while it supports the hole carriers flow hence current density of SHJ solar cells can be enhanced. A summary of single layer and solar cell characteristics of MoO x layer for the application of carrier selective contact and dopant-free asymmetric heterocontact (DASH) solar cells is reported.

AB - Excellent surface passivation and carrier selective contact formed by the metal oxide induced junctions is required for future high efficiency silicon solar cells. Due to wide optical bandgap and high work function of molybdenum oxide (MoO x , x < 3) films envisioned as a superior hole selective layer in organic light emitting diodes and photovoltaics applications. We have studied the influence of ultrathin MoO x layer, as a hole-selective contact for high efficiency of silicon heterojunction (SHJ) solar cell. MoO x films can be deposited by atomic layer deposition, magnetron sputtering and thermal evaporation. Due to higher work function of MoO x films, a potential barrier can develop against electrons while it supports the hole carriers flow hence current density of SHJ solar cells can be enhanced. A summary of single layer and solar cell characteristics of MoO x layer for the application of carrier selective contact and dopant-free asymmetric heterocontact (DASH) solar cells is reported.

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KW - Hole selective carrier contact

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KW - Silicon heterojunction solar cell

KW - XPS analysis

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