Utilizing highly crystalline pyroelectric material as functional gate dielectric in organic thin-film transistors

The utilization of highly crystalline pyroelectric material as functional gate dielectric in organic thin-film transistors was reported. The study presented the direct use of a highly crystalline P(VDF-TrFE) material with a very large remnant polarization as a pyroelectric date-insulator layer in an OTFT structure for temperature-sensing applications. A modified transistor equation to fully explain the phenomenon and related problems, such as the effect of the geometry on pooling. The fabrication was processed with the deposition of an Ni gate electrode on a clean polyimide film by the electroplating method. A poling strategy based on step-wise poling process was employed in order to investigate the pyroelectric property of P(VDF-TrFE) in the OTFT device. The results of the study are subjected to the high crystallinity of the material where the capacitance is determined by the field-induced polarization of nonpolar material, which vanishes on the application of electric field.