Using Zintl-Klemm intermetallics in oxide-semiconductor heteroepitaxy

A. A. Demkov; H. Seo; X. Zhang; J. Ramdani

doi:10.1063/1.3685508

Using Zintl-Klemm intermetallics in oxide-semiconductor heteroepitaxy

A. A. Demkov
, H. Seo
, X. Zhang
, J. Ramdani

University of Texas at Austin
M.D. Andersen Cancer Research Center
National Semiconductor Corporation

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We propose using the Zintl-Klemm (Z-K) bonding to engineer transition layers that provide wetting between ionic oxides and covalent semiconductors to ensure two-dimensional epitaxial growth. Using density functional theory to test this concept, we consider the thermodynamics of wetting at the GaAs/SrTiO ₃ interface, and identify Sr aluminide SrAl ₂ as the Z-K wetting layer. We discuss the atomic structure and bonding at the interface, and estimate the conduction band discontinuity to be 0.6 eV, in good agreement with recent experiment.

Original language	English
Article number	071602
Journal	Applied Physics Letters
Volume	100
Issue number	7
DOIs	https://doi.org/10.1063/1.3685508
State	Published - 13 Feb 2012
Externally published	Yes

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abstract = "We propose using the Zintl-Klemm (Z-K) bonding to engineer transition layers that provide wetting between ionic oxides and covalent semiconductors to ensure two-dimensional epitaxial growth. Using density functional theory to test this concept, we consider the thermodynamics of wetting at the GaAs/SrTiO 3 interface, and identify Sr aluminide SrAl 2 as the Z-K wetting layer. We discuss the atomic structure and bonding at the interface, and estimate the conduction band discontinuity to be 0.6 eV, in good agreement with recent experiment.",

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AB - We propose using the Zintl-Klemm (Z-K) bonding to engineer transition layers that provide wetting between ionic oxides and covalent semiconductors to ensure two-dimensional epitaxial growth. Using density functional theory to test this concept, we consider the thermodynamics of wetting at the GaAs/SrTiO 3 interface, and identify Sr aluminide SrAl 2 as the Z-K wetting layer. We discuss the atomic structure and bonding at the interface, and estimate the conduction band discontinuity to be 0.6 eV, in good agreement with recent experiment.

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Using Zintl-Klemm intermetallics in oxide-semiconductor heteroepitaxy

Abstract

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