TY - JOUR
T1 - Unveiling the origin of n-type doping of natural MoS2
T2 - carbon
AU - Park, Youngsin
AU - Li, Nannan
AU - Jung, Daesung
AU - Singh, Laishram Tomba
AU - Baik, Jaeyoon
AU - Lee, Eunsook
AU - Oh, Dongseok
AU - Kim, Young Dok
AU - Lee, Jin Yong
AU - Woo, Jeongseok
AU - Park, Seungmin
AU - Kim, Hanchul
AU - Lee, Geunseop
AU - Lee, Geunsik
AU - Hwang, Chan Cuk
N1 - Publisher Copyright:
© 2023, Springer Nature Limited.
PY - 2023/12
Y1 - 2023/12
N2 - MoS2 has attracted intense interest in many applications. Natural MoS2 and field-effect transistors made of it generally exhibit n-type characteristics, but its origin is unknown. Herein, we show that C is the origin of the universal n-type doping of natural MoS2. Photoemission spectroscopies reveal that while many MoS2 samples with C detected are n-type, some without C exhibit p-type characteristics. The C-free, p-type MoS2 changes to n-type over time with the concurrent appearance of C that is out-diffused from bulk, indicating that C induces the n-type doping. The C-origin is verified by C-deposition and supported by theoretical calculations. This carbon appears as nanometer-scale defects frequently observed in scanning tunneling microscopy. In addition, we propose, based on the calculations, that S vacancies are responsible for the p-type characteristics, which contrasts with the widespread belief. This work provides new perspectives on MoS2 doping and presents a new direction for fabricating reliable MoS2 devices.
AB - MoS2 has attracted intense interest in many applications. Natural MoS2 and field-effect transistors made of it generally exhibit n-type characteristics, but its origin is unknown. Herein, we show that C is the origin of the universal n-type doping of natural MoS2. Photoemission spectroscopies reveal that while many MoS2 samples with C detected are n-type, some without C exhibit p-type characteristics. The C-free, p-type MoS2 changes to n-type over time with the concurrent appearance of C that is out-diffused from bulk, indicating that C induces the n-type doping. The C-origin is verified by C-deposition and supported by theoretical calculations. This carbon appears as nanometer-scale defects frequently observed in scanning tunneling microscopy. In addition, we propose, based on the calculations, that S vacancies are responsible for the p-type characteristics, which contrasts with the widespread belief. This work provides new perspectives on MoS2 doping and presents a new direction for fabricating reliable MoS2 devices.
UR - https://www.scopus.com/pages/publications/85169813983
U2 - 10.1038/s41699-023-00424-x
DO - 10.1038/s41699-023-00424-x
M3 - Article
AN - SCOPUS:85169813983
SN - 2397-7132
VL - 7
JO - npj 2D Materials and Applications
JF - npj 2D Materials and Applications
IS - 1
M1 - 60
ER -