Unveiling Resistance Switching Mechanisms in Undoped HfOxFerroelectric Tunnel Junction Using Low-Frequency Noise Spectroscopy

Wonjun Shin; Ryun Han Koo; Kyung Kyu Min; Dongseok Kwon; Jae Joon Kim; Daewoong Kwon; Jong Ho Lee

doi:10.1109/LED.2022.3231809

Unveiling Resistance Switching Mechanisms in Undoped HfO_xFerroelectric Tunnel Junction Using Low-Frequency Noise Spectroscopy

Wonjun Shin
, Ryun Han Koo
, Kyung Kyu Min
, Dongseok Kwon
, Jae Joon Kim
, Daewoong Kwon
, Jong Ho Lee

Seoul National University
Inha University

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We demonstrate that the resistance switching (RS) of an undoped hafnium oxide (HfOx)-based ferroelectric tunnel junction (FTJ) is affected not only by ferroelectric domain switching of HfOx but also by the redistribution of oxygen vacancies inside HfOx, known as the working principle of resistive random-access memory. It is revealed that the RS mechanism varies depending on the program bias applied to FTJ. Through low-frequency noise spectroscopy, a precise method for distinguishing two distinct RS processes intrinsic to FTJ is presented.

Original language	English
Pages (from-to)	345-348
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	44
Issue number	2
DOIs	https://doi.org/10.1109/LED.2022.3231809
State	Published - 1 Feb 2023
Externally published	Yes

Keywords

Ferroelectric tunnel junction (FTJ)
low-frequency noise (LFN)
resistive random-access memory (RRAM)

Access to Document

10.1109/LED.2022.3231809

Cite this

@article{44b1277e92894be58e4cfe7356215021,

title = "Unveiling Resistance Switching Mechanisms in Undoped HfOxFerroelectric Tunnel Junction Using Low-Frequency Noise Spectroscopy",

abstract = "We demonstrate that the resistance switching (RS) of an undoped hafnium oxide (HfOx)-based ferroelectric tunnel junction (FTJ) is affected not only by ferroelectric domain switching of HfOx but also by the redistribution of oxygen vacancies inside HfOx, known as the working principle of resistive random-access memory. It is revealed that the RS mechanism varies depending on the program bias applied to FTJ. Through low-frequency noise spectroscopy, a precise method for distinguishing two distinct RS processes intrinsic to FTJ is presented.",

keywords = "Ferroelectric tunnel junction (FTJ), low-frequency noise (LFN), resistive random-access memory (RRAM)",

author = "Wonjun Shin and Koo, \{Ryun Han\} and Min, \{Kyung Kyu\} and Dongseok Kwon and Kim, \{Jae Joon\} and Daewoong Kwon and Lee, \{Jong Ho\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2023",

month = feb,

day = "1",

doi = "10.1109/LED.2022.3231809",

language = "English",

volume = "44",

pages = "345--348",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Unveiling Resistance Switching Mechanisms in Undoped HfOxFerroelectric Tunnel Junction Using Low-Frequency Noise Spectroscopy

AU - Shin, Wonjun

AU - Koo, Ryun Han

AU - Min, Kyung Kyu

AU - Kwon, Dongseok

AU - Kim, Jae Joon

AU - Kwon, Daewoong

AU - Lee, Jong Ho

PY - 2023/2/1

Y1 - 2023/2/1

N2 - We demonstrate that the resistance switching (RS) of an undoped hafnium oxide (HfOx)-based ferroelectric tunnel junction (FTJ) is affected not only by ferroelectric domain switching of HfOx but also by the redistribution of oxygen vacancies inside HfOx, known as the working principle of resistive random-access memory. It is revealed that the RS mechanism varies depending on the program bias applied to FTJ. Through low-frequency noise spectroscopy, a precise method for distinguishing two distinct RS processes intrinsic to FTJ is presented.

AB - We demonstrate that the resistance switching (RS) of an undoped hafnium oxide (HfOx)-based ferroelectric tunnel junction (FTJ) is affected not only by ferroelectric domain switching of HfOx but also by the redistribution of oxygen vacancies inside HfOx, known as the working principle of resistive random-access memory. It is revealed that the RS mechanism varies depending on the program bias applied to FTJ. Through low-frequency noise spectroscopy, a precise method for distinguishing two distinct RS processes intrinsic to FTJ is presented.

KW - Ferroelectric tunnel junction (FTJ)

KW - low-frequency noise (LFN)

KW - resistive random-access memory (RRAM)

UR - https://www.scopus.com/pages/publications/85146230609

U2 - 10.1109/LED.2022.3231809

DO - 10.1109/LED.2022.3231809

M3 - Article

AN - SCOPUS:85146230609

SN - 0741-3106

VL - 44

SP - 345

EP - 348

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

Unveiling Resistance Switching Mechanisms in Undoped HfO_xFerroelectric Tunnel Junction Using Low-Frequency Noise Spectroscopy

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this