Unveiling Defect-Related Raman Mode of Monolayer WS2 via Tip-Enhanced Resonance Raman Scattering

Chanwoo Lee; Byeong Geun Jeong; Seok Joon Yun; Young Hee Lee; Seung Mi Lee; Mun Seok Jeong

doi:10.1021/acsnano.8b04265

Unveiling Defect-Related Raman Mode of Monolayer WS₂ via Tip-Enhanced Resonance Raman Scattering

Chanwoo Lee
, Byeong Geun Jeong
, Seok Joon Yun
, Young Hee Lee
, Seung Mi Lee
, Mun Seok Jeong

Department of Physics

Sungkyunkwan University
Institute for Basic Science
Korea Research Institute of Standards and Science

Research output: Contribution to journal › Article › peer-review

133 Scopus citations

Abstract

Monolayer tungsten disulfide (WS₂) has emerged as an active material for optoelectronic devices due to its quantum yield of photoluminescence. Despite the enormous research about physical characteristics of monolayer WS₂, the defect-related Raman scattering has been rarely studied. Here, we report the correlation of topography and Raman scattering in monolayer WS₂ by using tip-enhanced resonance Raman spectroscopy and reveal defect-related Raman modes denoted as D and D′ modes. We found that the sulfur vacancies introduce not only the red-shifted A_1g mode but also the D and D′ modes by the density functional theory calculations. The observed defect-related Raman modes can be utilized to evaluate the quality of monolayer WS₂ and will be helpful to improve the performance of WS₂ optoelectronic devices.

Original language	English
Pages (from-to)	9982-9990
Number of pages	9
Journal	ACS Nano
Volume	12
Issue number	10
DOIs	https://doi.org/10.1021/acsnano.8b04265
State	Published - 23 Oct 2018

Keywords

defects
sulfur vacancies
tip-enhanced Raman scattering
transition metal dichalcogenides
tungsten disulfide

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10.1021/acsnano.8b04265

Cite this

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title = "Unveiling Defect-Related Raman Mode of Monolayer WS2 via Tip-Enhanced Resonance Raman Scattering",

abstract = "Monolayer tungsten disulfide (WS2) has emerged as an active material for optoelectronic devices due to its quantum yield of photoluminescence. Despite the enormous research about physical characteristics of monolayer WS2, the defect-related Raman scattering has been rarely studied. Here, we report the correlation of topography and Raman scattering in monolayer WS2 by using tip-enhanced resonance Raman spectroscopy and reveal defect-related Raman modes denoted as D and D′ modes. We found that the sulfur vacancies introduce not only the red-shifted A1g mode but also the D and D′ modes by the density functional theory calculations. The observed defect-related Raman modes can be utilized to evaluate the quality of monolayer WS2 and will be helpful to improve the performance of WS2 optoelectronic devices.",

keywords = "defects, sulfur vacancies, tip-enhanced Raman scattering, transition metal dichalcogenides, tungsten disulfide",

author = "Chanwoo Lee and Jeong, \{Byeong Geun\} and Yun, \{Seok Joon\} and Lee, \{Young Hee\} and Lee, \{Seung Mi\} and Jeong, \{Mun Seok\}",

note = "Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = oct,

day = "23",

doi = "10.1021/acsnano.8b04265",

language = "English",

volume = "12",

pages = "9982--9990",

journal = "ACS Nano",

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publisher = "American Chemical Society",

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TY - JOUR

T1 - Unveiling Defect-Related Raman Mode of Monolayer WS2 via Tip-Enhanced Resonance Raman Scattering

AU - Lee, Chanwoo

AU - Jeong, Byeong Geun

AU - Yun, Seok Joon

AU - Lee, Young Hee

AU - Lee, Seung Mi

AU - Jeong, Mun Seok

PY - 2018/10/23

Y1 - 2018/10/23

N2 - Monolayer tungsten disulfide (WS2) has emerged as an active material for optoelectronic devices due to its quantum yield of photoluminescence. Despite the enormous research about physical characteristics of monolayer WS2, the defect-related Raman scattering has been rarely studied. Here, we report the correlation of topography and Raman scattering in monolayer WS2 by using tip-enhanced resonance Raman spectroscopy and reveal defect-related Raman modes denoted as D and D′ modes. We found that the sulfur vacancies introduce not only the red-shifted A1g mode but also the D and D′ modes by the density functional theory calculations. The observed defect-related Raman modes can be utilized to evaluate the quality of monolayer WS2 and will be helpful to improve the performance of WS2 optoelectronic devices.

AB - Monolayer tungsten disulfide (WS2) has emerged as an active material for optoelectronic devices due to its quantum yield of photoluminescence. Despite the enormous research about physical characteristics of monolayer WS2, the defect-related Raman scattering has been rarely studied. Here, we report the correlation of topography and Raman scattering in monolayer WS2 by using tip-enhanced resonance Raman spectroscopy and reveal defect-related Raman modes denoted as D and D′ modes. We found that the sulfur vacancies introduce not only the red-shifted A1g mode but also the D and D′ modes by the density functional theory calculations. The observed defect-related Raman modes can be utilized to evaluate the quality of monolayer WS2 and will be helpful to improve the performance of WS2 optoelectronic devices.

KW - defects

KW - sulfur vacancies

KW - tip-enhanced Raman scattering

KW - transition metal dichalcogenides

KW - tungsten disulfide

UR - https://www.scopus.com/pages/publications/85052805716

U2 - 10.1021/acsnano.8b04265

DO - 10.1021/acsnano.8b04265

M3 - Article

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AN - SCOPUS:85052805716

SN - 1936-0851

VL - 12

SP - 9982

EP - 9990

JO - ACS Nano

JF - ACS Nano

IS - 10

ER -

Unveiling Defect-Related Raman Mode of Monolayer WS₂ via Tip-Enhanced Resonance Raman Scattering

Abstract

Keywords

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