Unraveling Threshold Voltage Instability in Ferroelectric Junctionless FETs Using Low-Frequency Noise Measurement with Base Bias

  • Wonjun Shin
  • , Ryun Han Koo
  • , Sangwoo Kim
  • , Dongseok Kwon
  • , Jae Joon Kim
  • , Daewoong Kwon
  • , Jong Ho Lee

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

This study proposes a novel low-frequency noise (LFN) measurement method to investigate the origin of threshold voltage (Vth) instability in junctionless ferroelectric field-effect transistors (JL FeFETs). It is found that different types of traps (ferroelectric (FE) / dielectric (DE) interface trap, FE bulk trap, and DE bulk trap) are responsible for the Vth instability depending on the delay time (tD) and the number of program/erase cycles.

Original languageEnglish
Pages (from-to)1768-1771
Number of pages4
JournalIEEE Electron Device Letters
Volume44
Issue number10
DOIs
StatePublished - 1 Oct 2023
Externally publishedYes

Keywords

  • junctionless ferroelectric field-effect transistor (JL FeFET)
  • low-frequency noise (LFN).
  • Threshold voltage (Vth) instability

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