Abstract
This study proposes a novel low-frequency noise (LFN) measurement method to investigate the origin of threshold voltage (Vth) instability in junctionless ferroelectric field-effect transistors (JL FeFETs). It is found that different types of traps (ferroelectric (FE) / dielectric (DE) interface trap, FE bulk trap, and DE bulk trap) are responsible for the Vth instability depending on the delay time (tD) and the number of program/erase cycles.
| Original language | English |
|---|---|
| Pages (from-to) | 1768-1771 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 44 |
| Issue number | 10 |
| DOIs | |
| State | Published - 1 Oct 2023 |
| Externally published | Yes |
Keywords
- junctionless ferroelectric field-effect transistor (JL FeFET)
- low-frequency noise (LFN).
- Threshold voltage (Vth) instability