Ultrathin TiO2 gate dielectric formation by annealing of sputtered Ti on nitrogen passivated Si substrates in nitric oxide ambient

H. F. Luan; A. Y. Mao; S. J. Lee; T. Y. Luo; D. L. Kwong

doi:10.1557/proc-567-481

Ultrathin TiO₂ gate dielectric formation by annealing of sputtered Ti on nitrogen passivated Si substrates in nitric oxide ambient

H. F. Luan, A. Y. Mao, S. J. Lee, T. Y. Luo, D. L. Kwong

University of Texas at Austin

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

We have fabricated very thin TiO₂ film (T_eq approx. 20 angstrom) by RTP oxidation of sputtered Ti in NO ambient on nitrogen passivated Si substrates. The leakage current is about two orders of magnitude lower than SiO₂ of identical T_eq. Results show that NO passivation layer prior to Ti sputtering is critical in reducing the leakage current. XPS results show that the temperature of RTP NO oxidation of sputtered Ti is very important for achieving high quality TiO₂ films. At high oxidation temperature an SiO₂ layer is formed at the interface between TiO₂ and Si and the leakage current is approaching to that of SiO₂.

Original language	English
Pages (from-to)	481-487
Number of pages	7
Journal	Materials Research Society Symposium - Proceedings
Volume	567
DOIs	https://doi.org/10.1557/proc-567-481
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA Duration: 5 Apr 1999 → 8 Apr 1999

Access to Document

10.1557/proc-567-481

Cite this

@article{7891111615534e0a931d8d75ce9b4df5,

title = "Ultrathin TiO2 gate dielectric formation by annealing of sputtered Ti on nitrogen passivated Si substrates in nitric oxide ambient",

abstract = "We have fabricated very thin TiO2 film (Teq approx. 20 angstrom) by RTP oxidation of sputtered Ti in NO ambient on nitrogen passivated Si substrates. The leakage current is about two orders of magnitude lower than SiO2 of identical Teq. Results show that NO passivation layer prior to Ti sputtering is critical in reducing the leakage current. XPS results show that the temperature of RTP NO oxidation of sputtered Ti is very important for achieving high quality TiO2 films. At high oxidation temperature an SiO2 layer is formed at the interface between TiO2 and Si and the leakage current is approaching to that of SiO2.",

author = "Luan, \{H. F.\} and Mao, \{A. Y.\} and Lee, \{S. J.\} and Luo, \{T. Y.\} and Kwong, \{D. L.\}",

year = "1999",

doi = "10.1557/proc-567-481",

language = "English",

volume = "567",

pages = "481--487",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics ; Conference date: 05-04-1999 Through 08-04-1999",

}

TY - JOUR

T1 - Ultrathin TiO2 gate dielectric formation by annealing of sputtered Ti on nitrogen passivated Si substrates in nitric oxide ambient

AU - Luan, H. F.

AU - Mao, A. Y.

AU - Lee, S. J.

AU - Luo, T. Y.

AU - Kwong, D. L.

PY - 1999

Y1 - 1999

N2 - We have fabricated very thin TiO2 film (Teq approx. 20 angstrom) by RTP oxidation of sputtered Ti in NO ambient on nitrogen passivated Si substrates. The leakage current is about two orders of magnitude lower than SiO2 of identical Teq. Results show that NO passivation layer prior to Ti sputtering is critical in reducing the leakage current. XPS results show that the temperature of RTP NO oxidation of sputtered Ti is very important for achieving high quality TiO2 films. At high oxidation temperature an SiO2 layer is formed at the interface between TiO2 and Si and the leakage current is approaching to that of SiO2.

AB - We have fabricated very thin TiO2 film (Teq approx. 20 angstrom) by RTP oxidation of sputtered Ti in NO ambient on nitrogen passivated Si substrates. The leakage current is about two orders of magnitude lower than SiO2 of identical Teq. Results show that NO passivation layer prior to Ti sputtering is critical in reducing the leakage current. XPS results show that the temperature of RTP NO oxidation of sputtered Ti is very important for achieving high quality TiO2 films. At high oxidation temperature an SiO2 layer is formed at the interface between TiO2 and Si and the leakage current is approaching to that of SiO2.

UR - https://www.scopus.com/pages/publications/0033329267

U2 - 10.1557/proc-567-481

DO - 10.1557/proc-567-481

M3 - Conference article

AN - SCOPUS:0033329267

SN - 0272-9172

VL - 567

SP - 481

EP - 487

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics

Y2 - 5 April 1999 through 8 April 1999

ER -

Ultrathin TiO₂ gate dielectric formation by annealing of sputtered Ti on nitrogen passivated Si substrates in nitric oxide ambient

Abstract

Access to Document

Other files and links

Fingerprint

Cite this