Ultraflat hexagonal boron nitride for high-κ dielectric integration

Hayoung Ko; Seungjin Lee; Ki Kang Kim

doi:10.1038/s41563-024-02013-9

Ultraflat hexagonal boron nitride for high-κ dielectric integration

Hayoung Ko
, Seungjin Lee
, Ki Kang Kim

Department of Energy

Sungkyunkwan University

Research output: Contribution to journal › Comment/debate

5 Scopus citations

Abstract

An ultraflat, single-crystal hexagonal boron nitride film enables the production of wafer-scale, ultrathin high-κ dielectrics for two-dimensional electronics, meeting the 2025 targets set by the International Roadmap for Devices and Systems.

Original language	English
Pages (from-to)	1461-1462
Number of pages	2
Journal	Nature Materials
Volume	23
Issue number	11
DOIs	https://doi.org/10.1038/s41563-024-02013-9
State	Published - Nov 2024

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title = "Ultraflat hexagonal boron nitride for high-κ dielectric integration",

abstract = "An ultraflat, single-crystal hexagonal boron nitride film enables the production of wafer-scale, ultrathin high-κ dielectrics for two-dimensional electronics, meeting the 2025 targets set by the International Roadmap for Devices and Systems.",

author = "Hayoung Ko and Seungjin Lee and Kim, \{Ki Kang\}",

note = "Publisher Copyright: {\textcopyright} Springer Nature Limited 2024.",

year = "2024",

month = nov,

doi = "10.1038/s41563-024-02013-9",

language = "English",

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T1 - Ultraflat hexagonal boron nitride for high-κ dielectric integration

AU - Ko, Hayoung

AU - Lee, Seungjin

AU - Kim, Ki Kang

N1 - Publisher Copyright: © Springer Nature Limited 2024.

PY - 2024/11

Y1 - 2024/11

N2 - An ultraflat, single-crystal hexagonal boron nitride film enables the production of wafer-scale, ultrathin high-κ dielectrics for two-dimensional electronics, meeting the 2025 targets set by the International Roadmap for Devices and Systems.

AB - An ultraflat, single-crystal hexagonal boron nitride film enables the production of wafer-scale, ultrathin high-κ dielectrics for two-dimensional electronics, meeting the 2025 targets set by the International Roadmap for Devices and Systems.

UR - https://www.scopus.com/pages/publications/85207957443

U2 - 10.1038/s41563-024-02013-9

DO - 10.1038/s41563-024-02013-9

M3 - Comment/debate

C2 - 39472750

AN - SCOPUS:85207957443

SN - 1476-1122

VL - 23

SP - 1461

EP - 1462

JO - Nature Materials

JF - Nature Materials

IS - 11

ER -

Ultraflat hexagonal boron nitride for high-κ dielectric integration

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