Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si

S. C. Song; H. F. Luan; C. H. Lee; A. Y. Mao; S. J. Lee; J. Gelpey; S. Marcus; D. L. Kwong

Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N₂O oxidation of NH₃-nitrided Si

S. C. Song
, H. F. Luan
, C. H. Lee
, A. Y. Mao
, S. J. Lee
, J. Gelpey
, S. Marcus
, D. L. Kwong

University of Texas at Austin

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

In this paper, we report ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NH₃ nitridation of Si followed by in-situ N₂O oxidation (NH₃+N₂O process). These films show excellent interface properties, significant lower leakage current (approx. 10²X), enhanced reliability, and superior boron diffusion barrier properties compared with SiO₂ of identical thickness.

Original language	English
Pages (from-to)	78-81
Number of pages	4
Journal	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan Duration: 7 Jun 1999 → 10 Jun 1999

Cite this

@article{b792bd8dd5924a0a9623ed92c0ea6678,

title = "Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si",

abstract = "In this paper, we report ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NH3 nitridation of Si followed by in-situ N2O oxidation (NH3+N2O process). These films show excellent interface properties, significant lower leakage current (approx. 102X), enhanced reliability, and superior boron diffusion barrier properties compared with SiO2 of identical thickness.",

author = "Song, \{S. C.\} and Luan, \{H. F.\} and Lee, \{C. H.\} and Mao, \{A. Y.\} and Lee, \{S. J.\} and J. Gelpey and S. Marcus and Kwong, \{D. L.\}",

year = "1999",

language = "English",

pages = "78--81",

journal = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

issn = "1524-766X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications ; Conference date: 07-06-1999 Through 10-06-1999",

}

TY - JOUR

T1 - Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si

AU - Song, S. C.

AU - Luan, H. F.

AU - Lee, C. H.

AU - Mao, A. Y.

AU - Lee, S. J.

AU - Gelpey, J.

AU - Marcus, S.

AU - Kwong, D. L.

PY - 1999

Y1 - 1999

N2 - In this paper, we report ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NH3 nitridation of Si followed by in-situ N2O oxidation (NH3+N2O process). These films show excellent interface properties, significant lower leakage current (approx. 102X), enhanced reliability, and superior boron diffusion barrier properties compared with SiO2 of identical thickness.

AB - In this paper, we report ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NH3 nitridation of Si followed by in-situ N2O oxidation (NH3+N2O process). These films show excellent interface properties, significant lower leakage current (approx. 102X), enhanced reliability, and superior boron diffusion barrier properties compared with SiO2 of identical thickness.

UR - https://www.scopus.com/pages/publications/0032599255

M3 - Conference article

AN - SCOPUS:0032599255

SN - 1524-766X

SP - 78

EP - 81

JO - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

JF - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

T2 - Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications

Y2 - 7 June 1999 through 10 June 1999

ER -

Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N₂O oxidation of NH₃-nitrided Si

Abstract

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