Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si

S. C. Song; H. F. Luan; C. H. Lee; A. Y. Mao; S. J. Lee; J. Gelpey; S. Marcus; D. L. Kwong

doi:10.1016/S0167-9317(99)00337-8

Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N₂O oxidation of NH₃-nitrided Si

S. C. Song, H. F. Luan, C. H. Lee, A. Y. Mao, S. J. Lee, J. Gelpey, S. Marcus, D. L. Kwong

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NM₃ nitridation of Si followed by in-situ N₂O oxidation are presented. These films showed excellent interface properties, significant lower leakage current (approximately 10²X), enhanced reliability, and superior boron diffusion barrier properties compared with SiO₂ of identical equivalent oxide thickness.

Original language	English
Pages (from-to)	55-58
Number of pages	4
Journal	Microelectronic Engineering
Volume	48
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(99)00337-8
State	Published - Sep 1999
Externally published	Yes
Event	Proceedings of the 1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99) - Kloster Banz, Ger Duration: 16 Jun 1999 → 19 Jun 1999

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10.1016/S0167-9317(99)00337-8

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@article{b575428e28db48c4bd2f5c7be94a250d,

title = "Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si",

abstract = "Ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NM3 nitridation of Si followed by in-situ N2O oxidation are presented. These films showed excellent interface properties, significant lower leakage current (approximately 102X), enhanced reliability, and superior boron diffusion barrier properties compared with SiO2 of identical equivalent oxide thickness.",

author = "Song, \{S. C.\} and Luan, \{H. F.\} and Lee, \{C. H.\} and Mao, \{A. Y.\} and Lee, \{S. J.\} and J. Gelpey and S. Marcus and Kwong, \{D. L.\}",

year = "1999",

month = sep,

doi = "10.1016/S0167-9317(99)00337-8",

language = "English",

volume = "48",

pages = "55--58",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1",

note = "Proceedings of the 1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99) ; Conference date: 16-06-1999 Through 19-06-1999",

}

TY - JOUR

T1 - Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si

AU - Song, S. C.

AU - Luan, H. F.

AU - Lee, C. H.

AU - Mao, A. Y.

AU - Lee, S. J.

AU - Gelpey, J.

AU - Marcus, S.

AU - Kwong, D. L.

PY - 1999/9

Y1 - 1999/9

N2 - Ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NM3 nitridation of Si followed by in-situ N2O oxidation are presented. These films showed excellent interface properties, significant lower leakage current (approximately 102X), enhanced reliability, and superior boron diffusion barrier properties compared with SiO2 of identical equivalent oxide thickness.

AB - Ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NM3 nitridation of Si followed by in-situ N2O oxidation are presented. These films showed excellent interface properties, significant lower leakage current (approximately 102X), enhanced reliability, and superior boron diffusion barrier properties compared with SiO2 of identical equivalent oxide thickness.

UR - https://www.scopus.com/pages/publications/0033190221

U2 - 10.1016/S0167-9317(99)00337-8

DO - 10.1016/S0167-9317(99)00337-8

M3 - Conference article

AN - SCOPUS:0033190221

SN - 0167-9317

VL - 48

SP - 55

EP - 58

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

T2 - Proceedings of the 1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99)

Y2 - 16 June 1999 through 19 June 1999

ER -

Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N₂O oxidation of NH₃-nitrided Si

Abstract

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