Two-way oxide rupture scheme for PUF implementation in low-cost IoT systems

C. Lee; J. Lee; Y. Lee

doi:10.1049/el.2020.0268

Two-way oxide rupture scheme for PUF implementation in low-cost IoT systems

C. Lee, J. Lee, Y. Lee

Department of Semiconductor Systems Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A two-way oxide rupture scheme in a transistor is proposed for area-efficient PUF implementation for low-cost IoT systems. Compared to a conventional one-way oxide rupture scheme, which requires a 4T unit cell structure, the proposed scheme allows a 2T unit cell structure, which enables up to 70% area reduction. A test chip is fabricated in 180 nm CMOS process to evaluate the effectiveness of the proposed scheme, confirming good randomness and uniqueness with small area overhead.

Original language	English
Pages (from-to)	1047-1048
Number of pages	2
Journal	Electronics Letters
Volume	56
Issue number	20
DOIs	https://doi.org/10.1049/el.2020.0268
State	Published - 30 Sep 2020

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10.1049/el.2020.0268

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abstract = "A two-way oxide rupture scheme in a transistor is proposed for area-efficient PUF implementation for low-cost IoT systems. Compared to a conventional one-way oxide rupture scheme, which requires a 4T unit cell structure, the proposed scheme allows a 2T unit cell structure, which enables up to 70\% area reduction. A test chip is fabricated in 180 nm CMOS process to evaluate the effectiveness of the proposed scheme, confirming good randomness and uniqueness with small area overhead.",

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Two-way oxide rupture scheme for PUF implementation in low-cost IoT systems

Abstract

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