Two-step lateral growth of GaN for improved emission from blue light-emitting diodes

Young Jae Park; Ji Hye Kang; Hyun Kyu Kim; Yashpal Singh Katharria; Nam Han; Min Han; Beo Deul Ryu; Eun Kyung Suh; Hyung Koun Cho; Chang Hee Hong

doi:10.1016/j.jcrysgro.2013.03.026

Two-step lateral growth of GaN for improved emission from blue light-emitting diodes

Young Jae Park
, Ji Hye Kang
, Hyun Kyu Kim
, Yashpal Singh Katharria
, Nam Han
, Min Han
, Beo Deul Ryu
, Eun Kyung Suh
, Hyung Koun Cho
, Chang Hee Hong

Department of Advanced Materials Science and Engineering

Jeonbuk National University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A two-step growth approach based on facet-controlled epitaxial lateral growth and the application of silica nanospheres was established to enhance the performance of GaN based light-emitting diodes (LEDs). In the first step, open inverted honeycomb cones (IHCs) were fabricated. These IHCs were filled with silica nanospheres and a second growth step was performed. As compared to LEDs fabricated on IHC templates, 2.7 fold electroluminescence (EL) intensity was obtained for silica nanospheres-stacked IHC due to improved crystal quality and light scattering at silica nanospheres. Simulation of emission intensity was carried out to determine the effect of dislocation density reduction on EL enhancement of the LEDs.

Original language	English
Pages (from-to)	157-162
Number of pages	6
Journal	Journal of Crystal Growth
Volume	372
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.03.026
State	Published - 2013

Keywords

A3. Metalorganic chemical vapor deposition
A3. Selective epitaxy
B1. Nitrides
B1. Sapphire
B2. Dielectric materials
B3. Light emitting diodes

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10.1016/j.jcrysgro.2013.03.026

Cite this

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title = "Two-step lateral growth of GaN for improved emission from blue light-emitting diodes",

abstract = "A two-step growth approach based on facet-controlled epitaxial lateral growth and the application of silica nanospheres was established to enhance the performance of GaN based light-emitting diodes (LEDs). In the first step, open inverted honeycomb cones (IHCs) were fabricated. These IHCs were filled with silica nanospheres and a second growth step was performed. As compared to LEDs fabricated on IHC templates, 2.7 fold electroluminescence (EL) intensity was obtained for silica nanospheres-stacked IHC due to improved crystal quality and light scattering at silica nanospheres. Simulation of emission intensity was carried out to determine the effect of dislocation density reduction on EL enhancement of the LEDs.",

keywords = "A3. Metalorganic chemical vapor deposition, A3. Selective epitaxy, B1. Nitrides, B1. Sapphire, B2. Dielectric materials, B3. Light emitting diodes",

author = "Park, \{Young Jae\} and Kang, \{Ji Hye\} and Kim, \{Hyun Kyu\} and Katharria, \{Yashpal Singh\} and Nam Han and Min Han and Ryu, \{Beo Deul\} and Suh, \{Eun Kyung\} and Cho, \{Hyung Koun\} and Hong, \{Chang Hee\}",

year = "2013",

doi = "10.1016/j.jcrysgro.2013.03.026",

language = "English",

volume = "372",

pages = "157--162",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Two-step lateral growth of GaN for improved emission from blue light-emitting diodes

AU - Park, Young Jae

AU - Kang, Ji Hye

AU - Kim, Hyun Kyu

AU - Katharria, Yashpal Singh

AU - Han, Nam

AU - Han, Min

AU - Ryu, Beo Deul

AU - Suh, Eun Kyung

AU - Cho, Hyung Koun

AU - Hong, Chang Hee

PY - 2013

Y1 - 2013

N2 - A two-step growth approach based on facet-controlled epitaxial lateral growth and the application of silica nanospheres was established to enhance the performance of GaN based light-emitting diodes (LEDs). In the first step, open inverted honeycomb cones (IHCs) were fabricated. These IHCs were filled with silica nanospheres and a second growth step was performed. As compared to LEDs fabricated on IHC templates, 2.7 fold electroluminescence (EL) intensity was obtained for silica nanospheres-stacked IHC due to improved crystal quality and light scattering at silica nanospheres. Simulation of emission intensity was carried out to determine the effect of dislocation density reduction on EL enhancement of the LEDs.

AB - A two-step growth approach based on facet-controlled epitaxial lateral growth and the application of silica nanospheres was established to enhance the performance of GaN based light-emitting diodes (LEDs). In the first step, open inverted honeycomb cones (IHCs) were fabricated. These IHCs were filled with silica nanospheres and a second growth step was performed. As compared to LEDs fabricated on IHC templates, 2.7 fold electroluminescence (EL) intensity was obtained for silica nanospheres-stacked IHC due to improved crystal quality and light scattering at silica nanospheres. Simulation of emission intensity was carried out to determine the effect of dislocation density reduction on EL enhancement of the LEDs.

KW - A3. Metalorganic chemical vapor deposition

KW - A3. Selective epitaxy

KW - B1. Nitrides

KW - B1. Sapphire

KW - B2. Dielectric materials

KW - B3. Light emitting diodes

UR - https://www.scopus.com/pages/publications/84876723726

U2 - 10.1016/j.jcrysgro.2013.03.026

DO - 10.1016/j.jcrysgro.2013.03.026

M3 - Article

AN - SCOPUS:84876723726

SN - 0022-0248

VL - 372

SP - 157

EP - 162

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Two-step lateral growth of GaN for improved emission from blue light-emitting diodes

Abstract

Keywords

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