TY - GEN
T1 - Two-stage CMOS/GaAs HBT Doherty Power Amplifier Module for 5G Handsets
AU - Jeon, Hyeongjin
AU - Na, Jongyun
AU - Oh, Hansik
AU - Yang, Youngoo
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - This paper presents a two-stage Doherty power amplifier module (PAM) in CMOS SOI and GaAs HBT technologies for 5G handsets. While the driver amplifier is implemented using SOI CMOS for low cost, the carrier and peaking amplifiers are implemented using InGaP/GaAs HBT for high efficiency and linearity. The proposed Doherty PAM has a differential driver whose two output terminals are connected to the input ports of the carrier and peaking amplifiers, respectively. For the 3.35 GHz continuous-wave (CW) signal, the proposed PAM exhibited a power-Added efficiency (PAE) of 30.3% and a power gain of 29.8 dB at a peak output power of 32.2 dBm. Using the 5G New Radio (NR) signal with a peak-To-Average power ratio (PAPR) of 9.7 dB and a signal bandwidth of 100 MHz, a linear gain of more than 19.5 dB and a linear output power of more than 17 dBm in the range of from 3.15-to 4.15 GHz with a supply voltage of 4.5 V.
AB - This paper presents a two-stage Doherty power amplifier module (PAM) in CMOS SOI and GaAs HBT technologies for 5G handsets. While the driver amplifier is implemented using SOI CMOS for low cost, the carrier and peaking amplifiers are implemented using InGaP/GaAs HBT for high efficiency and linearity. The proposed Doherty PAM has a differential driver whose two output terminals are connected to the input ports of the carrier and peaking amplifiers, respectively. For the 3.35 GHz continuous-wave (CW) signal, the proposed PAM exhibited a power-Added efficiency (PAE) of 30.3% and a power gain of 29.8 dB at a peak output power of 32.2 dBm. Using the 5G New Radio (NR) signal with a peak-To-Average power ratio (PAPR) of 9.7 dB and a signal bandwidth of 100 MHz, a linear gain of more than 19.5 dB and a linear output power of more than 17 dBm in the range of from 3.15-to 4.15 GHz with a supply voltage of 4.5 V.
KW - 5G NR handset
KW - Doherty power amplifier
KW - InGaP/GaAs HBT
KW - Power amplifier module
KW - SOI CMOS
UR - https://www.scopus.com/pages/publications/85139172583
U2 - 10.1109/RFIT54256.2022.9882351
DO - 10.1109/RFIT54256.2022.9882351
M3 - Conference contribution
AN - SCOPUS:85139172583
T3 - RFIT 2022 - 2022 IEEE International Symposium on Radio-Frequency Integration Technology
SP - 12
EP - 14
BT - RFIT 2022 - 2022 IEEE International Symposium on Radio-Frequency Integration Technology
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2022
Y2 - 29 August 2022 through 31 August 2022
ER -