Two-Dimensional van der Waals Material PdPSe: Investigation on Electrical Transport

Sooheon Cho; Byung Joo Jeong; Kyung Hwan Choi; Bom Lee; Jiho Jeon; Sang Hoon Lee; Bum Jun Kim; Jae Hyun Lee; Hyung Suk Oh; Hak Ki Yu; Jae Young Choi

doi:10.1021/acsaelm.3c00629

Two-Dimensional van der Waals Material PdPSe: Investigation on Electrical Transport

Sooheon Cho, Byung Joo Jeong, Kyung Hwan Choi, Bom Lee, Jiho Jeon, Sang Hoon Lee, Bum Jun Kim, Jae Hyun Lee, Hyung Suk Oh, Hak Ki Yu, Jae Young Choi

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The unique puckered pentagonal structure of the layered semiconductor material palladium phosphorus selenide (PdPSe) has gathered attention, but its electronic performance has not been thoroughly investigated. In this study, PdPSe is synthesized via chemical vapor transport, and its thickness-dependent electrical properties are examined from 1.4 to 309 nm via the field-effect transistor (FET) measurement. The material exhibits n-type semiconducting behavior, with relatively high mobility observed at a specific thickness range, reaching up to 4.9 cm² V^-1 s^-1 with a maximum on/off ratio of 2.86 × 10⁸ at a V_ds of 1 V. The transport mechanism is analyzed by calculating the Schottky barrier height (SBH) using a thermionic emission model. Temperature-dependent analysis revealed that the device has a minuscule SBH and the PdPSe FET device follows the Fowler-Nordheim tunneling model. Through drain-voltage-dependent FET characteristic analysis, an improvement in carrier mobility up to 33 cm² V^-1 s^-1 is observed at a high drain voltage of 10 V. These findings provide fundamental insights into the performance of PdPSe FETs and their potential use in next-generation electronic applications based on two-dimensional (2D) materials.

Original language	English
Pages (from-to)	4409-4416
Number of pages	8
Journal	ACS Applied Electronic Materials
Volume	5
Issue number	8
DOIs	https://doi.org/10.1021/acsaelm.3c00629
State	Published - 22 Aug 2023

Keywords

charge transport mechanism
field-effect transistor
PdPSe
thickness-dependent property
two-dimensional material

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10.1021/acsaelm.3c00629

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@article{bd1d991c63534128b240e878dcffd57c,

title = "Two-Dimensional van der Waals Material PdPSe: Investigation on Electrical Transport",

abstract = "The unique puckered pentagonal structure of the layered semiconductor material palladium phosphorus selenide (PdPSe) has gathered attention, but its electronic performance has not been thoroughly investigated. In this study, PdPSe is synthesized via chemical vapor transport, and its thickness-dependent electrical properties are examined from 1.4 to 309 nm via the field-effect transistor (FET) measurement. The material exhibits n-type semiconducting behavior, with relatively high mobility observed at a specific thickness range, reaching up to 4.9 cm2 V-1 s-1 with a maximum on/off ratio of 2.86 × 108 at a Vds of 1 V. The transport mechanism is analyzed by calculating the Schottky barrier height (SBH) using a thermionic emission model. Temperature-dependent analysis revealed that the device has a minuscule SBH and the PdPSe FET device follows the Fowler-Nordheim tunneling model. Through drain-voltage-dependent FET characteristic analysis, an improvement in carrier mobility up to 33 cm2 V-1 s-1 is observed at a high drain voltage of 10 V. These findings provide fundamental insights into the performance of PdPSe FETs and their potential use in next-generation electronic applications based on two-dimensional (2D) materials.",

keywords = "charge transport mechanism, field-effect transistor, PdPSe, thickness-dependent property, two-dimensional material",

author = "Sooheon Cho and Jeong, \{Byung Joo\} and Choi, \{Kyung Hwan\} and Bom Lee and Jiho Jeon and Lee, \{Sang Hoon\} and Kim, \{Bum Jun\} and Lee, \{Jae Hyun\} and Oh, \{Hyung Suk\} and Yu, \{Hak Ki\} and Choi, \{Jae Young\}",

note = "Publisher Copyright: {\textcopyright} 2023 American Chemical Society.",

year = "2023",

month = aug,

day = "22",

doi = "10.1021/acsaelm.3c00629",

language = "English",

volume = "5",

pages = "4409--4416",

journal = "ACS Applied Electronic Materials",

issn = "2637-6113",

publisher = "American Chemical Society",

number = "8",

}

TY - JOUR

T1 - Two-Dimensional van der Waals Material PdPSe

T2 - Investigation on Electrical Transport

AU - Cho, Sooheon

AU - Jeong, Byung Joo

AU - Choi, Kyung Hwan

AU - Lee, Bom

AU - Jeon, Jiho

AU - Lee, Sang Hoon

AU - Kim, Bum Jun

AU - Lee, Jae Hyun

AU - Oh, Hyung Suk

AU - Yu, Hak Ki

AU - Choi, Jae Young

PY - 2023/8/22

Y1 - 2023/8/22

N2 - The unique puckered pentagonal structure of the layered semiconductor material palladium phosphorus selenide (PdPSe) has gathered attention, but its electronic performance has not been thoroughly investigated. In this study, PdPSe is synthesized via chemical vapor transport, and its thickness-dependent electrical properties are examined from 1.4 to 309 nm via the field-effect transistor (FET) measurement. The material exhibits n-type semiconducting behavior, with relatively high mobility observed at a specific thickness range, reaching up to 4.9 cm2 V-1 s-1 with a maximum on/off ratio of 2.86 × 108 at a Vds of 1 V. The transport mechanism is analyzed by calculating the Schottky barrier height (SBH) using a thermionic emission model. Temperature-dependent analysis revealed that the device has a minuscule SBH and the PdPSe FET device follows the Fowler-Nordheim tunneling model. Through drain-voltage-dependent FET characteristic analysis, an improvement in carrier mobility up to 33 cm2 V-1 s-1 is observed at a high drain voltage of 10 V. These findings provide fundamental insights into the performance of PdPSe FETs and their potential use in next-generation electronic applications based on two-dimensional (2D) materials.

AB - The unique puckered pentagonal structure of the layered semiconductor material palladium phosphorus selenide (PdPSe) has gathered attention, but its electronic performance has not been thoroughly investigated. In this study, PdPSe is synthesized via chemical vapor transport, and its thickness-dependent electrical properties are examined from 1.4 to 309 nm via the field-effect transistor (FET) measurement. The material exhibits n-type semiconducting behavior, with relatively high mobility observed at a specific thickness range, reaching up to 4.9 cm2 V-1 s-1 with a maximum on/off ratio of 2.86 × 108 at a Vds of 1 V. The transport mechanism is analyzed by calculating the Schottky barrier height (SBH) using a thermionic emission model. Temperature-dependent analysis revealed that the device has a minuscule SBH and the PdPSe FET device follows the Fowler-Nordheim tunneling model. Through drain-voltage-dependent FET characteristic analysis, an improvement in carrier mobility up to 33 cm2 V-1 s-1 is observed at a high drain voltage of 10 V. These findings provide fundamental insights into the performance of PdPSe FETs and their potential use in next-generation electronic applications based on two-dimensional (2D) materials.

KW - charge transport mechanism

KW - field-effect transistor

KW - PdPSe

KW - thickness-dependent property

KW - two-dimensional material

UR - https://www.scopus.com/pages/publications/85169035450

U2 - 10.1021/acsaelm.3c00629

DO - 10.1021/acsaelm.3c00629

M3 - Article

AN - SCOPUS:85169035450

SN - 2637-6113

VL - 5

SP - 4409

EP - 4416

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 8

ER -

Two-Dimensional van der Waals Material PdPSe: Investigation on Electrical Transport

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