Tunneling field effect transistor integrated with black phosphorus-MoS₂ junction and ion gel dielectric

We report an interband tunneling field effect transistor (TFET) integrated with a Black Phosphorus (BP)-MoS₂ junction and ion gel as a top gate dielectric. The operation of the BP-M_OS₂ TFET is based on the modulation of the energy band alignment of the BP-MoS₂ junction with electrostatic gating control on the MoS₂ channel from the top gate through the ion gel dielectric and the supply of tunneling carriers from the BP source, which is degenerately doped with ion gel. The obtained subthreshold swing of the BP-MoS₂ TFET reached 65 mV/dec at room temperature and 51 mV/dec at 160 K, maintaining low SS values in more than 2 orders of drain current range. The demonstrated interband TFET based on the BP-MoS₂ junction shows significant promise for further application to a new class of two-dimensional functional devices.