Trap-controlled space-charge-limited current conduction in the Cr-doped SrTiO3 thin films deposited by using pulsed laser deposition

Bach Thang Phan; Chulho Jung; Taekjib Choi; Jaichan Lee

doi:10.3938/jkps.51.664

Trap-controlled space-charge-limited current conduction in the Cr-doped SrTiO₃ thin films deposited by using pulsed laser deposition

Bach Thang Phan
, Chulho Jung
, Taekjib Choi
, Jaichan Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Current-voltage (I-V) characteristics of 0.2 % Cr-doped SrTiO₃ (Cr-STO) thin film in a metal-insulator-metal (MIM), i.e., Pt/Cr-STO/La _0.5Sr_0.5CoO₃, structure were measured, and the electrical conduction was investigated. The I-V characteristics exhibited hysteretic and asymmetric behaviors. The hysteretic behavior is attributed to bistable resistive switching between a high-resistance state (HRS) and a low-resistance state (LRS) with voltage polarity. The voltages that induced the resistance switching were above ±3 V. The resistance ratio between the two conduction states was about two orders of magnitude. An analysis of the I-V characteristics revealed that the electrical conduction behavior followed a trap-controlled space-charge-limited current. The trap-filled limit voltage, V_TFL, was -1.6 V.

Original language	English
Pages (from-to)	664-668
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	51
Issue number	2 PART I
DOIs	https://doi.org/10.3938/jkps.51.664
State	Published - Aug 2007

Keywords

MIM structure
Resistance switching
Trap-controlled space-charge-limited current mechanism

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10.3938/jkps.51.664

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title = "Trap-controlled space-charge-limited current conduction in the Cr-doped SrTiO3 thin films deposited by using pulsed laser deposition",

abstract = "Current-voltage (I-V) characteristics of 0.2 \% Cr-doped SrTiO3 (Cr-STO) thin film in a metal-insulator-metal (MIM), i.e., Pt/Cr-STO/La 0.5Sr0.5CoO3, structure were measured, and the electrical conduction was investigated. The I-V characteristics exhibited hysteretic and asymmetric behaviors. The hysteretic behavior is attributed to bistable resistive switching between a high-resistance state (HRS) and a low-resistance state (LRS) with voltage polarity. The voltages that induced the resistance switching were above ±3 V. The resistance ratio between the two conduction states was about two orders of magnitude. An analysis of the I-V characteristics revealed that the electrical conduction behavior followed a trap-controlled space-charge-limited current. The trap-filled limit voltage, VTFL, was -1.6 V.",

keywords = "MIM structure, Resistance switching, Trap-controlled space-charge-limited current mechanism",

author = "Phan, \{Bach Thang\} and Chulho Jung and Taekjib Choi and Jaichan Lee",

year = "2007",

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doi = "10.3938/jkps.51.664",

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pages = "664--668",

journal = "Journal of the Korean Physical Society",

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publisher = "Korean Physical Society",

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}

TY - JOUR

T1 - Trap-controlled space-charge-limited current conduction in the Cr-doped SrTiO3 thin films deposited by using pulsed laser deposition

AU - Phan, Bach Thang

AU - Jung, Chulho

AU - Choi, Taekjib

AU - Lee, Jaichan

PY - 2007/8

Y1 - 2007/8

N2 - Current-voltage (I-V) characteristics of 0.2 % Cr-doped SrTiO3 (Cr-STO) thin film in a metal-insulator-metal (MIM), i.e., Pt/Cr-STO/La 0.5Sr0.5CoO3, structure were measured, and the electrical conduction was investigated. The I-V characteristics exhibited hysteretic and asymmetric behaviors. The hysteretic behavior is attributed to bistable resistive switching between a high-resistance state (HRS) and a low-resistance state (LRS) with voltage polarity. The voltages that induced the resistance switching were above ±3 V. The resistance ratio between the two conduction states was about two orders of magnitude. An analysis of the I-V characteristics revealed that the electrical conduction behavior followed a trap-controlled space-charge-limited current. The trap-filled limit voltage, VTFL, was -1.6 V.

AB - Current-voltage (I-V) characteristics of 0.2 % Cr-doped SrTiO3 (Cr-STO) thin film in a metal-insulator-metal (MIM), i.e., Pt/Cr-STO/La 0.5Sr0.5CoO3, structure were measured, and the electrical conduction was investigated. The I-V characteristics exhibited hysteretic and asymmetric behaviors. The hysteretic behavior is attributed to bistable resistive switching between a high-resistance state (HRS) and a low-resistance state (LRS) with voltage polarity. The voltages that induced the resistance switching were above ±3 V. The resistance ratio between the two conduction states was about two orders of magnitude. An analysis of the I-V characteristics revealed that the electrical conduction behavior followed a trap-controlled space-charge-limited current. The trap-filled limit voltage, VTFL, was -1.6 V.

KW - MIM structure

KW - Resistance switching

KW - Trap-controlled space-charge-limited current mechanism

UR - https://www.scopus.com/pages/publications/34548319185

U2 - 10.3938/jkps.51.664

DO - 10.3938/jkps.51.664

M3 - Article

AN - SCOPUS:34548319185

SN - 0374-4884

VL - 51

SP - 664

EP - 668

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 2 PART I

ER -

Trap-controlled space-charge-limited current conduction in the Cr-doped SrTiO₃ thin films deposited by using pulsed laser deposition

Abstract

Keywords

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