Transport properties of two-dimensional electron gases containing linear ordering InAs self-assembled quantum dots

Gil Ho Kim; D. A. Ritchie; C. T. Liang; G. D. Lian; J. Yuan; M. Pepper; L. M. Brown

doi:10.1063/1.1378801

Transport properties of two-dimensional electron gases containing linear ordering InAs self-assembled quantum dots

Gil Ho Kim
, D. A. Ritchie
, C. T. Liang
, G. D. Lian
, J. Yuan
, M. Pepper
, L. M. Brown

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We present a study of the anisotropic properties of two-dimensional electron gases formed in GaAs/AlGaAs heterostructures in which InAs self-assembled quantum dots have been inserted into the center of a GaAs quantum well. We observe an anisotropic mobility for the orthogonal [110] and [110] directions. The mobility in the [110] direction was found to be up to approximately twice that in the [110] direction. It is suggested that the interface roughness scattering due to the inserted InAs material could be a cause for the large anisotropies in mobility.

Original language	English
Pages (from-to)	3896-3898
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	24
DOIs	https://doi.org/10.1063/1.1378801
State	Published - 11 Jun 2001
Externally published	Yes

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10.1063/1.1378801

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title = "Transport properties of two-dimensional electron gases containing linear ordering InAs self-assembled quantum dots",

abstract = "We present a study of the anisotropic properties of two-dimensional electron gases formed in GaAs/AlGaAs heterostructures in which InAs self-assembled quantum dots have been inserted into the center of a GaAs quantum well. We observe an anisotropic mobility for the orthogonal [110] and [110] directions. The mobility in the [110] direction was found to be up to approximately twice that in the [110] direction. It is suggested that the interface roughness scattering due to the inserted InAs material could be a cause for the large anisotropies in mobility.",

author = "Kim, \{Gil Ho\} and Ritchie, \{D. A.\} and Liang, \{C. T.\} and Lian, \{G. D.\} and J. Yuan and M. Pepper and Brown, \{L. M.\}",

year = "2001",

month = jun,

day = "11",

doi = "10.1063/1.1378801",

language = "English",

volume = "78",

pages = "3896--3898",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Transport properties of two-dimensional electron gases containing linear ordering InAs self-assembled quantum dots

AU - Kim, Gil Ho

AU - Ritchie, D. A.

AU - Liang, C. T.

AU - Lian, G. D.

AU - Yuan, J.

AU - Pepper, M.

AU - Brown, L. M.

PY - 2001/6/11

Y1 - 2001/6/11

N2 - We present a study of the anisotropic properties of two-dimensional electron gases formed in GaAs/AlGaAs heterostructures in which InAs self-assembled quantum dots have been inserted into the center of a GaAs quantum well. We observe an anisotropic mobility for the orthogonal [110] and [110] directions. The mobility in the [110] direction was found to be up to approximately twice that in the [110] direction. It is suggested that the interface roughness scattering due to the inserted InAs material could be a cause for the large anisotropies in mobility.

AB - We present a study of the anisotropic properties of two-dimensional electron gases formed in GaAs/AlGaAs heterostructures in which InAs self-assembled quantum dots have been inserted into the center of a GaAs quantum well. We observe an anisotropic mobility for the orthogonal [110] and [110] directions. The mobility in the [110] direction was found to be up to approximately twice that in the [110] direction. It is suggested that the interface roughness scattering due to the inserted InAs material could be a cause for the large anisotropies in mobility.

UR - https://www.scopus.com/pages/publications/0035844487

U2 - 10.1063/1.1378801

DO - 10.1063/1.1378801

M3 - Article

AN - SCOPUS:0035844487

SN - 0003-6951

VL - 78

SP - 3896

EP - 3898

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Transport properties of two-dimensional electron gases containing linear ordering InAs self-assembled quantum dots

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