Transport properties in samples containing InAs self-assembled dots and dashes

Gil Ho Kim; J. T. Nicholls; D. A. Ritchie; S. I. Khondaker; C. T. Liang; T. W. Kim

Transport properties in samples containing InAs self-assembled dots and dashes

Gil Ho Kim
, J. T. Nicholls
, D. A. Ritchie
, S. I. Khondaker
, C. T. Liang
, T. W. Kim

Department of Electronic and Electrical Engineering

University of Cambridge
University of Texas at Austin
National Taiwan University
Kwangwoon University

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We report transport measurements of a two-dimensional electron gas (2DEG) formed in a GaAs/AlGaAs quantum well, in which InAs has been inserted into the centre of the GaAs quantum well. Depending on the capping layers, the InAs forms either self-assembled quantum dots or dashes, and due to the resulting strain fields repulsive short-range scattering is experienced by the conduction electrons in the 2DEG, The single electron transport is through a dot or dash isolated using a pair of split-gate deposited on the sample surface. By application of a source-drain voltage we investigate the energies of a dot or dash that is trapped within the one dimensional channel denned by the range 0.5-2 meV. We speculate that the dot and dash are formed by strain modulation of the conduction of the conduction band in the GaAs quantum well.

Original language	English
Pages (from-to)	S454-S457
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
State	Published - Feb 2003
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002

Keywords

Coulomb blockade
Quantum phase transitions
Self-assembled dashes
Self-assembled dots

Cite this

@article{d34629fad6d74fab97a21b200f1dcaa4,

title = "Transport properties in samples containing InAs self-assembled dots and dashes",

abstract = "We report transport measurements of a two-dimensional electron gas (2DEG) formed in a GaAs/AlGaAs quantum well, in which InAs has been inserted into the centre of the GaAs quantum well. Depending on the capping layers, the InAs forms either self-assembled quantum dots or dashes, and due to the resulting strain fields repulsive short-range scattering is experienced by the conduction electrons in the 2DEG, The single electron transport is through a dot or dash isolated using a pair of split-gate deposited on the sample surface. By application of a source-drain voltage we investigate the energies of a dot or dash that is trapped within the one dimensional channel denned by the range 0.5-2 meV. We speculate that the dot and dash are formed by strain modulation of the conduction of the conduction band in the GaAs quantum well.",

keywords = "Coulomb blockade, Quantum phase transitions, Self-assembled dashes, Self-assembled dots",

author = "Kim, \{Gil Ho\} and Nicholls, \{J. T.\} and Ritchie, \{D. A.\} and Khondaker, \{S. I.\} and Liang, \{C. T.\} and Kim, \{T. W.\}",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S454--S457",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SPEC.",

note = "Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

}

TY - JOUR

T1 - Transport properties in samples containing InAs self-assembled dots and dashes

AU - Kim, Gil Ho

AU - Nicholls, J. T.

AU - Ritchie, D. A.

AU - Khondaker, S. I.

AU - Liang, C. T.

AU - Kim, T. W.

PY - 2003/2

Y1 - 2003/2

N2 - We report transport measurements of a two-dimensional electron gas (2DEG) formed in a GaAs/AlGaAs quantum well, in which InAs has been inserted into the centre of the GaAs quantum well. Depending on the capping layers, the InAs forms either self-assembled quantum dots or dashes, and due to the resulting strain fields repulsive short-range scattering is experienced by the conduction electrons in the 2DEG, The single electron transport is through a dot or dash isolated using a pair of split-gate deposited on the sample surface. By application of a source-drain voltage we investigate the energies of a dot or dash that is trapped within the one dimensional channel denned by the range 0.5-2 meV. We speculate that the dot and dash are formed by strain modulation of the conduction of the conduction band in the GaAs quantum well.

AB - We report transport measurements of a two-dimensional electron gas (2DEG) formed in a GaAs/AlGaAs quantum well, in which InAs has been inserted into the centre of the GaAs quantum well. Depending on the capping layers, the InAs forms either self-assembled quantum dots or dashes, and due to the resulting strain fields repulsive short-range scattering is experienced by the conduction electrons in the 2DEG, The single electron transport is through a dot or dash isolated using a pair of split-gate deposited on the sample surface. By application of a source-drain voltage we investigate the energies of a dot or dash that is trapped within the one dimensional channel denned by the range 0.5-2 meV. We speculate that the dot and dash are formed by strain modulation of the conduction of the conduction band in the GaAs quantum well.

KW - Coulomb blockade

KW - Quantum phase transitions

KW - Self-assembled dashes

KW - Self-assembled dots

UR - https://www.scopus.com/pages/publications/0037305227

M3 - Conference article

AN - SCOPUS:0037305227

SN - 0374-4884

VL - 42

SP - S454-S457

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

Transport properties in samples containing InAs self-assembled dots and dashes

Abstract

Keywords

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