Abstract
A top-emitting organic light-emitting diode (TEOLED) was fabricated with a semi-transparent multilayer cathode composed of Cs/Al/Ag and an ITO capping layer. The optical properties of Cs (0.5 nm)/Al (2.0 nm)/Ag (20 nm) at a wavelength of 533 nm exhibited a transmittance of 50 %. The light-output of the TEOELD with the Cs/AI/Ag/ITO showed a maximum luminance of 51,000 cd/m 2 at a current density of 2.32 A/m2 (corresponding to the forward bias voltage of 11.2 V); the device structure consisted of glass/Ag (100 nm)/ITO (125 nm)/2-TNATA (30 nm)/NPB (15 nm)/Alq3 (55 nm)/Cs (1 nm)/Al (2 nm)/Ag (20 nm)/ITO (100 nm). Also, the external quantum efficiency and the power efficiency at a luminance of 1000 cd/m2 (corresponding to the forward bias voltage of 6.8 V) were 1.7 % and 2.0 lm/W, respectively. This TEOLED exhibited similar electrical properties, but a little lower light output, compared with a reference TEOLED of the same structure using Alq3 instead of ITO as the capping layer. These characteristics are strongly governed by the thickness, the electrical properties, and optical properties of the semi-transparent multilayer cathode composed of Cs/Al/Ag and by the optical properties of the top capping layer.
| Original language | English |
|---|---|
| Pages (from-to) | 1147-1151 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 51 |
| Issue number | 3 |
| DOIs | |
| State | Published - Sep 2007 |
Keywords
- Capping layer
- Dc sputter
- ITO
- STCPL
- TEOLED
- Top emission
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