Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network

Sunkook Kim; Seongmin Kim; Min Xu; Lin Yu; Peide D. Ye; David B. Janes; Sanghyun Ju; Saeed Mohammadi

doi:10.1109/DRC.2009.5354867

Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network

Sunkook Kim
, Seongmin Kim
, Min Xu
, Lin Yu
, Peide D. Ye
, David B. Janes
, Sanghyun Ju
, Saeed Mohammadi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (I_on) in μA range, high on/off current ratio (I_on/I_off), high field effect mobility, and uniform threshold voltage(V_t). In this study, we demonstrate fully-transparent high-performance and high-yield thin film transistors based on random growth of single-walled carbon nanotube (SWNT) network that are easy to fabricate., These SWNT-based transparent thin film transistors show excellent electrical and optical characteristics and unlike the devices previously reported¹ they do not require electrical burning to achieve high on/off current ratios.

Original language	English
Title of host publication	67th Device Research Conference, DRC 2009
Pages	117-118
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2009.5354867
State	Published - 11 Dec 2009
Externally published	Yes
Event	67th Device Research Conference, DRC 2009 - University Park, PA, United States Duration: 22 Jun 2009 → 24 Jun 2009

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	67th Device Research Conference, DRC 2009
Country/Territory	United States
City	University Park, PA
Period	22/06/09 → 24/06/09

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10.1109/DRC.2009.5354867

Cite this

Kim, S., Kim, S., Xu, M., Yu, L., Ye, P. D., Janes, D. B., Ju, S., & Mohammadi, S. (2009). Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network. In 67th Device Research Conference, DRC 2009 (pp. 117-118). Article 5354867 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2009.5354867

@inproceedings{1561f0f04fc6480c8326426bd2598d82,

title = "Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network",

abstract = "Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (Ion) in μA range, high on/off current ratio (Ion/Ioff), high field effect mobility, and uniform threshold voltage(Vt). In this study, we demonstrate fully-transparent high-performance and high-yield thin film transistors based on random growth of single-walled carbon nanotube (SWNT) network that are easy to fabricate., These SWNT-based transparent thin film transistors show excellent electrical and optical characteristics and unlike the devices previously reported1 they do not require electrical burning to achieve high on/off current ratios.",

author = "Sunkook Kim and Seongmin Kim and Min Xu and Lin Yu and Ye, \{Peide D.\} and Janes, \{David B.\} and Sanghyun Ju and Saeed Mohammadi",

year = "2009",

month = dec,

day = "11",

doi = "10.1109/DRC.2009.5354867",

language = "English",

isbn = "9781424435289",

series = "Device Research Conference - Conference Digest, DRC",

pages = "117--118",

booktitle = "67th Device Research Conference, DRC 2009",

note = "67th Device Research Conference, DRC 2009 ; Conference date: 22-06-2009 Through 24-06-2009",

}

Kim, S, Kim, S, Xu, M, Yu, L, Ye, PD, Janes, DB, Ju, S & Mohammadi, S 2009, Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network. in 67th Device Research Conference, DRC 2009., 5354867, Device Research Conference - Conference Digest, DRC, pp. 117-118, 67th Device Research Conference, DRC 2009, University Park, PA, United States, 22/06/09. https://doi.org/10.1109/DRC.2009.5354867

Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network. / Kim, Sunkook; Kim, Seongmin; Xu, Min et al.
67th Device Research Conference, DRC 2009. 2009. p. 117-118 5354867 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network

AU - Kim, Sunkook

AU - Kim, Seongmin

AU - Xu, Min

AU - Yu, Lin

AU - Ye, Peide D.

AU - Janes, David B.

AU - Ju, Sanghyun

AU - Mohammadi, Saeed

PY - 2009/12/11

Y1 - 2009/12/11

N2 - Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (Ion) in μA range, high on/off current ratio (Ion/Ioff), high field effect mobility, and uniform threshold voltage(Vt). In this study, we demonstrate fully-transparent high-performance and high-yield thin film transistors based on random growth of single-walled carbon nanotube (SWNT) network that are easy to fabricate., These SWNT-based transparent thin film transistors show excellent electrical and optical characteristics and unlike the devices previously reported1 they do not require electrical burning to achieve high on/off current ratios.

AB - Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (Ion) in μA range, high on/off current ratio (Ion/Ioff), high field effect mobility, and uniform threshold voltage(Vt). In this study, we demonstrate fully-transparent high-performance and high-yield thin film transistors based on random growth of single-walled carbon nanotube (SWNT) network that are easy to fabricate., These SWNT-based transparent thin film transistors show excellent electrical and optical characteristics and unlike the devices previously reported1 they do not require electrical burning to achieve high on/off current ratios.

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DO - 10.1109/DRC.2009.5354867

M3 - Conference contribution

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SN - 9781424435289

T3 - Device Research Conference - Conference Digest, DRC

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BT - 67th Device Research Conference, DRC 2009

T2 - 67th Device Research Conference, DRC 2009

Y2 - 22 June 2009 through 24 June 2009

ER -

Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network

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