Transmission electron microscopy study of degradation in transparent indium tin oxide/Ag/indium tin oxide multilayer films

Jin A. Jeong; Han Ki Kim; Hyun Woo Koo; Tae Woong Kim

doi:10.1063/1.4812815

Transmission electron microscopy study of degradation in transparent indium tin oxide/Ag/indium tin oxide multilayer films

Jin A. Jeong
, Han Ki Kim
, Hyun Woo Koo
, Tae Woong Kim

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The degradation mechanism and structural evolution of transparent ITO/Ag/ITO (IAI) multilayer films caused by rapid thermal annealing (RTA) were investigated by high resolution transmission electron microscopy (HRTEM) and synchrotron X-ray scattering analysis. The IAI multilayer with low sheet resistance of 9.51 Ω/square and high transmittance of 88.24% was significantly degraded after 600°C RTA. Discontinuity, agglomeration of the embedded Ag layer at the interface region of the IAI multilayer, and oxygen diffusion through crystalline ITO grain boundaries into Ag layers led to electrical and optical degradation of the IAI multilayer. Using HRTEM analysis, the microstructures and interfaces of as-deposited and 600°C annealed IAI multilayer films were compared to explain their electrical and optical degradation mechanisms.

Original language	English
Article number	011902
Journal	Applied Physics Letters
Volume	103
Issue number	1
DOIs	https://doi.org/10.1063/1.4812815
State	Published - 1 Jul 2013
Externally published	Yes

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title = "Transmission electron microscopy study of degradation in transparent indium tin oxide/Ag/indium tin oxide multilayer films",

abstract = "The degradation mechanism and structural evolution of transparent ITO/Ag/ITO (IAI) multilayer films caused by rapid thermal annealing (RTA) were investigated by high resolution transmission electron microscopy (HRTEM) and synchrotron X-ray scattering analysis. The IAI multilayer with low sheet resistance of 9.51 Ω/square and high transmittance of 88.24\% was significantly degraded after 600°C RTA. Discontinuity, agglomeration of the embedded Ag layer at the interface region of the IAI multilayer, and oxygen diffusion through crystalline ITO grain boundaries into Ag layers led to electrical and optical degradation of the IAI multilayer. Using HRTEM analysis, the microstructures and interfaces of as-deposited and 600°C annealed IAI multilayer films were compared to explain their electrical and optical degradation mechanisms.",

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T1 - Transmission electron microscopy study of degradation in transparent indium tin oxide/Ag/indium tin oxide multilayer films

AU - Jeong, Jin A.

AU - Kim, Han Ki

AU - Koo, Hyun Woo

AU - Kim, Tae Woong

PY - 2013/7/1

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N2 - The degradation mechanism and structural evolution of transparent ITO/Ag/ITO (IAI) multilayer films caused by rapid thermal annealing (RTA) were investigated by high resolution transmission electron microscopy (HRTEM) and synchrotron X-ray scattering analysis. The IAI multilayer with low sheet resistance of 9.51 Ω/square and high transmittance of 88.24% was significantly degraded after 600°C RTA. Discontinuity, agglomeration of the embedded Ag layer at the interface region of the IAI multilayer, and oxygen diffusion through crystalline ITO grain boundaries into Ag layers led to electrical and optical degradation of the IAI multilayer. Using HRTEM analysis, the microstructures and interfaces of as-deposited and 600°C annealed IAI multilayer films were compared to explain their electrical and optical degradation mechanisms.

AB - The degradation mechanism and structural evolution of transparent ITO/Ag/ITO (IAI) multilayer films caused by rapid thermal annealing (RTA) were investigated by high resolution transmission electron microscopy (HRTEM) and synchrotron X-ray scattering analysis. The IAI multilayer with low sheet resistance of 9.51 Ω/square and high transmittance of 88.24% was significantly degraded after 600°C RTA. Discontinuity, agglomeration of the embedded Ag layer at the interface region of the IAI multilayer, and oxygen diffusion through crystalline ITO grain boundaries into Ag layers led to electrical and optical degradation of the IAI multilayer. Using HRTEM analysis, the microstructures and interfaces of as-deposited and 600°C annealed IAI multilayer films were compared to explain their electrical and optical degradation mechanisms.

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U2 - 10.1063/1.4812815

DO - 10.1063/1.4812815

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VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

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Transmission electron microscopy study of degradation in transparent indium tin oxide/Ag/indium tin oxide multilayer films

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