Transition of hydrated oxide layer for aluminum electrolytic capacitors

Choong Soo Chi; Yongsoo Jeong; Hong Joo Ahn; Jong Ho Lee; Jung Gu Kim; Jun Hee Lee; Kyung Wook Jang; Han Jun Oh

doi:10.1016/j.msea.2006.02.317

Transition of hydrated oxide layer for aluminum electrolytic capacitors

Choong Soo Chi, Yongsoo Jeong, Hong Joo Ahn, Jong Ho Lee, Jung Gu Kim, Jun Hee Lee, Kyung Wook Jang, Han Jun Oh

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides.

Original language	English
Pages (from-to)	314-317
Number of pages	4
Journal	Materials Science and Engineering: A
Volume	448-451
DOIs	https://doi.org/10.1016/j.msea.2006.02.317
State	Published - 25 Mar 2007

Keywords

Anodization
Boehmite
Dielectric layer
Hydrous layer
RBS

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10.1016/j.msea.2006.02.317

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title = "Transition of hydrated oxide layer for aluminum electrolytic capacitors",

abstract = "A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides.",

keywords = "Anodization, Boehmite, Dielectric layer, Hydrous layer, RBS",

author = "Chi, \{Choong Soo\} and Yongsoo Jeong and Ahn, \{Hong Joo\} and Lee, \{Jong Ho\} and Kim, \{Jung Gu\} and Lee, \{Jun Hee\} and Jang, \{Kyung Wook\} and Oh, \{Han Jun\}",

year = "2007",

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day = "25",

doi = "10.1016/j.msea.2006.02.317",

language = "English",

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journal = "Materials Science and Engineering: A",

issn = "0921-5093",

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TY - JOUR

T1 - Transition of hydrated oxide layer for aluminum electrolytic capacitors

AU - Chi, Choong Soo

AU - Jeong, Yongsoo

AU - Ahn, Hong Joo

AU - Lee, Jong Ho

AU - Kim, Jung Gu

AU - Lee, Jun Hee

AU - Jang, Kyung Wook

AU - Oh, Han Jun

PY - 2007/3/25

Y1 - 2007/3/25

N2 - A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides.

AB - A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides.

KW - Anodization

KW - Boehmite

KW - Dielectric layer

KW - Hydrous layer

KW - RBS

UR - https://www.scopus.com/pages/publications/33847240841

U2 - 10.1016/j.msea.2006.02.317

DO - 10.1016/j.msea.2006.02.317

M3 - Article

AN - SCOPUS:33847240841

SN - 0921-5093

VL - 448-451

SP - 314

EP - 317

JO - Materials Science and Engineering: A

JF - Materials Science and Engineering: A

ER -

Transition of hydrated oxide layer for aluminum electrolytic capacitors

Abstract

Keywords

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