@inproceedings{cbfc72316dcd4f78bee5114795aa3c39,
title = "Transfer characteristics of H202-Doped ZrlnZnO thin film transistors",
abstract = "Solution-processed zirconium-indium-zinc-oxide thin-film transistors (ZIZO TFTs) were fabricated with and without hydrogen peroxide (H2O2). With an incorporation of H2O2 into the channel layer, threshold voltage shift under positive bias stress were improved. We realized the reduced trap density of ZIZO TFTs with 2 M H2O2 incorporation.",
keywords = "Hydrogen peroxide, Positive bias stress, Solution-process, TFTs, ZrInZnO",
author = "Sanamin Lee and Bohyeon Jeon and Byoungdeog Choi",
note = "Publisher Copyright: {\textcopyright} 2019 ITE and SID.; 26th International Display Workshops, IDW 2019 ; Conference date: 27-11-2019 Through 29-11-2019",
year = "2019",
language = "English",
series = "Proceedings of the International Display Workshops",
publisher = "International Display Workshops",
pages = "515--517",
booktitle = "26th International Display Workshops, IDW 2019",
address = "Japan",
}