T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process

  • Behnam S. Rikan
  • , David Kim
  • , Kyung Duk Choi
  • , Arash Hejazi
  • , Joon Mo Yoo
  • , Younggun Pu
  • , Seokkee Kim
  • , Hyungki Huh
  • , Yeonjae Jung
  • , Kang Yoon Lee

Research output: Contribution to journal › Article › peer-review

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