Tin oxide films deposited by ozone-assisted thermal chemical vapor deposition

Jeong Woon Bae; Sang Woon Lee; Kook Hyun Song; Jung Il Park; Kwang Ja Park; Young Wook Ko; Geun Young Yeom

doi:10.1143/jjap.38.2917

Tin oxide films deposited by ozone-assisted thermal chemical vapor deposition

Jeong Woon Bae
, Sang Woon Lee
, Kook Hyun Song
, Jung Il Park
, Kwang Ja Park
, Young Wook Ko
, Geun Young Yeom

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Transparent conductive tin oxide (TO, SnO₂) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyltin (TMT) with oxygen and oxygen containing 2.96 to 5.1 mol% O₃. The properties of TO films have been changed with the gas flow rate (oxygen, oxygen containing ozone) and the substrate temperature. The use of oxygen containing ozone instead of pure oxygen reduced substrate temperature significantly and the resistivity while maintaining the same growth rate. The films prepared using ozone showed resistivity ranging from 10^-2 to 10^-3 Ωcm, and ranging mobility from 10.5 to 13.7 cm²/Vs.

Original language	English
Pages (from-to)	2917-2920
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	38
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.38.2917
State	Published - 1999

Keywords

CVD
Oxygen vacancy
Ozone
Tin oxide
TMT

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10.1143/jjap.38.2917

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title = "Tin oxide films deposited by ozone-assisted thermal chemical vapor deposition",

abstract = "Transparent conductive tin oxide (TO, SnO2) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyltin (TMT) with oxygen and oxygen containing 2.96 to 5.1 mol\% O3. The properties of TO films have been changed with the gas flow rate (oxygen, oxygen containing ozone) and the substrate temperature. The use of oxygen containing ozone instead of pure oxygen reduced substrate temperature significantly and the resistivity while maintaining the same growth rate. The films prepared using ozone showed resistivity ranging from 10-2 to 10-3 Ωcm, and ranging mobility from 10.5 to 13.7 cm2/Vs.",

keywords = "CVD, Oxygen vacancy, Ozone, Tin oxide, TMT",

author = "Bae, \{Jeong Woon\} and Lee, \{Sang Woon\} and Song, \{Kook Hyun\} and Park, \{Jung Il\} and Park, \{Kwang Ja\} and Ko, \{Young Wook\} and Yeom, \{Geun Young\}",

year = "1999",

doi = "10.1143/jjap.38.2917",

language = "English",

volume = "38",

pages = "2917--2920",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

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TY - JOUR

T1 - Tin oxide films deposited by ozone-assisted thermal chemical vapor deposition

AU - Bae, Jeong Woon

AU - Lee, Sang Woon

AU - Song, Kook Hyun

AU - Park, Jung Il

AU - Park, Kwang Ja

AU - Ko, Young Wook

AU - Yeom, Geun Young

PY - 1999

Y1 - 1999

N2 - Transparent conductive tin oxide (TO, SnO2) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyltin (TMT) with oxygen and oxygen containing 2.96 to 5.1 mol% O3. The properties of TO films have been changed with the gas flow rate (oxygen, oxygen containing ozone) and the substrate temperature. The use of oxygen containing ozone instead of pure oxygen reduced substrate temperature significantly and the resistivity while maintaining the same growth rate. The films prepared using ozone showed resistivity ranging from 10-2 to 10-3 Ωcm, and ranging mobility from 10.5 to 13.7 cm2/Vs.

AB - Transparent conductive tin oxide (TO, SnO2) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyltin (TMT) with oxygen and oxygen containing 2.96 to 5.1 mol% O3. The properties of TO films have been changed with the gas flow rate (oxygen, oxygen containing ozone) and the substrate temperature. The use of oxygen containing ozone instead of pure oxygen reduced substrate temperature significantly and the resistivity while maintaining the same growth rate. The films prepared using ozone showed resistivity ranging from 10-2 to 10-3 Ωcm, and ranging mobility from 10.5 to 13.7 cm2/Vs.

KW - CVD

KW - Oxygen vacancy

KW - Ozone

KW - Tin oxide

KW - TMT

UR - https://www.scopus.com/pages/publications/0032633041

U2 - 10.1143/jjap.38.2917

DO - 10.1143/jjap.38.2917

M3 - Article

AN - SCOPUS:0032633041

SN - 0021-4922

VL - 38

SP - 2917

EP - 2920

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 5 A

ER -

Tin oxide films deposited by ozone-assisted thermal chemical vapor deposition

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Keywords

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