Time-dependent dielectric breakdown in poly-Si CVD HfO2 gate stack

S. J. Lee; C. H. Lee; C. H. Choi; D. L. Kwong

doi:10.1109/RELPHY.2002.996671

Time-dependent dielectric breakdown in poly-Si CVD HfO₂ gate stack

S. J. Lee
, C. H. Lee
, C. H. Choi
, D. L. Kwong

University of Texas at Austin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

In this paper, we present a comprehensive study on long-term reliability of CVD HfO₂ gate stacks with n⁺-poly-Si gate electrodes. The area dependence and temperature acceleration (25-150°C) of TDDB, defect generation rate, and critical defect density of CVD HfO₂ gate stacks are studied. Results show that 10 year lifetime of HfO₂/n⁺-poly-Si gate stack (EOT = 14.5 Å) is projected for Vg = -2.0 V @ 25°C and Vg = -1.56 V @ 150°C. This excellent reliability characteristics of HfO₂ gate stack is mainly attributed to the thicker physical thickness of HfO₂, resulting in significant reduction of tunneling leakage current by a factor of 10³∼10⁴ while maintaining comparable Weibull slope factor. In addition, the critical defect density of HfO₂ gate stack is comparable to SiO₂ with similar physical thickness. However, considering the cumulative impact of temperature acceleration at 150°C, scaling of an effective gate oxide area of 0.1 cm² and a maximum allowed fraction of failures of 0.01%, the maximum allowed operating voltage is projected to be only ∼0.85 V for HfO₂/poly-Si gate stack with EOT = 14.5 Å.

Original language	English
Title of host publication	2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	409-414
Number of pages	6
ISBN (Electronic)	0780373529
DOIs	https://doi.org/10.1109/RELPHY.2002.996671
State	Published - 2002
Externally published	Yes
Event	40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 - Dallas, United States Duration: 7 Apr 2002 → 11 Apr 2002

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2002-January
ISSN (Print)	1541-7026

Conference

Conference	40th Annual IEEE International Reliability Physics Symposium, IRPS 2002
Country/Territory	United States
City	Dallas
Period	7/04/02 → 11/04/02

Keywords

Acceleration
Capacitance-voltage characteristics
Dielectric breakdown
Electrodes
Hafnium oxide
High K dielectric materials
Leakage current
Temperature
Tunneling
Voltage

Access to Document

10.1109/RELPHY.2002.996671

Cite this

Lee, S. J., Lee, C. H., Choi, C. H., & Kwong, D. L. (2002). Time-dependent dielectric breakdown in poly-Si CVD HfO₂ gate stack. In 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual (pp. 409-414). Article 996671 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2002.996671

@inproceedings{2c8509ce177e4d32b34da2b1bb06c47a,

title = "Time-dependent dielectric breakdown in poly-Si CVD HfO2 gate stack",

abstract = "In this paper, we present a comprehensive study on long-term reliability of CVD HfO2 gate stacks with n+-poly-Si gate electrodes. The area dependence and temperature acceleration (25-150°C) of TDDB, defect generation rate, and critical defect density of CVD HfO2 gate stacks are studied. Results show that 10 year lifetime of HfO2/n+-poly-Si gate stack (EOT = 14.5 {\AA}) is projected for Vg = -2.0 V @ 25°C and Vg = -1.56 V @ 150°C. This excellent reliability characteristics of HfO2 gate stack is mainly attributed to the thicker physical thickness of HfO2, resulting in significant reduction of tunneling leakage current by a factor of 103∼104 while maintaining comparable Weibull slope factor. In addition, the critical defect density of HfO2 gate stack is comparable to SiO2 with similar physical thickness. However, considering the cumulative impact of temperature acceleration at 150°C, scaling of an effective gate oxide area of 0.1 cm2 and a maximum allowed fraction of failures of 0.01\%, the maximum allowed operating voltage is projected to be only ∼0.85 V for HfO2/poly-Si gate stack with EOT = 14.5 {\AA}.",

keywords = "Acceleration, Capacitance-voltage characteristics, Dielectric breakdown, Electrodes, Hafnium oxide, High K dielectric materials, Leakage current, Temperature, Tunneling, Voltage",

author = "Lee, \{S. J.\} and Lee, \{C. H.\} and Choi, \{C. H.\} and Kwong, \{D. L.\}",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 ; Conference date: 07-04-2002 Through 11-04-2002",

year = "2002",

doi = "10.1109/RELPHY.2002.996671",

language = "English",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "409--414",

booktitle = "2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual",

}

Lee, SJ, Lee, CH, Choi, CH & Kwong, DL 2002, Time-dependent dielectric breakdown in poly-Si CVD HfO₂ gate stack. in 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual., 996671, IEEE International Reliability Physics Symposium Proceedings, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 409-414, 40th Annual IEEE International Reliability Physics Symposium, IRPS 2002, Dallas, United States, 7/04/02. https://doi.org/10.1109/RELPHY.2002.996671

Time-dependent dielectric breakdown in poly-Si CVD HfO₂ gate stack. / Lee, S. J.; Lee, C. H.; Choi, C. H. et al.
2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual. Institute of Electrical and Electronics Engineers Inc., 2002. p. 409-414 996671 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Time-dependent dielectric breakdown in poly-Si CVD HfO2 gate stack

AU - Lee, S. J.

AU - Lee, C. H.

AU - Choi, C. H.

AU - Kwong, D. L.

PY - 2002

Y1 - 2002

N2 - In this paper, we present a comprehensive study on long-term reliability of CVD HfO2 gate stacks with n+-poly-Si gate electrodes. The area dependence and temperature acceleration (25-150°C) of TDDB, defect generation rate, and critical defect density of CVD HfO2 gate stacks are studied. Results show that 10 year lifetime of HfO2/n+-poly-Si gate stack (EOT = 14.5 Å) is projected for Vg = -2.0 V @ 25°C and Vg = -1.56 V @ 150°C. This excellent reliability characteristics of HfO2 gate stack is mainly attributed to the thicker physical thickness of HfO2, resulting in significant reduction of tunneling leakage current by a factor of 103∼104 while maintaining comparable Weibull slope factor. In addition, the critical defect density of HfO2 gate stack is comparable to SiO2 with similar physical thickness. However, considering the cumulative impact of temperature acceleration at 150°C, scaling of an effective gate oxide area of 0.1 cm2 and a maximum allowed fraction of failures of 0.01%, the maximum allowed operating voltage is projected to be only ∼0.85 V for HfO2/poly-Si gate stack with EOT = 14.5 Å.

AB - In this paper, we present a comprehensive study on long-term reliability of CVD HfO2 gate stacks with n+-poly-Si gate electrodes. The area dependence and temperature acceleration (25-150°C) of TDDB, defect generation rate, and critical defect density of CVD HfO2 gate stacks are studied. Results show that 10 year lifetime of HfO2/n+-poly-Si gate stack (EOT = 14.5 Å) is projected for Vg = -2.0 V @ 25°C and Vg = -1.56 V @ 150°C. This excellent reliability characteristics of HfO2 gate stack is mainly attributed to the thicker physical thickness of HfO2, resulting in significant reduction of tunneling leakage current by a factor of 103∼104 while maintaining comparable Weibull slope factor. In addition, the critical defect density of HfO2 gate stack is comparable to SiO2 with similar physical thickness. However, considering the cumulative impact of temperature acceleration at 150°C, scaling of an effective gate oxide area of 0.1 cm2 and a maximum allowed fraction of failures of 0.01%, the maximum allowed operating voltage is projected to be only ∼0.85 V for HfO2/poly-Si gate stack with EOT = 14.5 Å.

KW - Acceleration

KW - Capacitance-voltage characteristics

KW - Dielectric breakdown

KW - Electrodes

KW - Hafnium oxide

KW - High K dielectric materials

KW - Leakage current

KW - Temperature

KW - Tunneling

KW - Voltage

UR - https://www.scopus.com/pages/publications/79952395995

U2 - 10.1109/RELPHY.2002.996671

DO - 10.1109/RELPHY.2002.996671

M3 - Conference contribution

AN - SCOPUS:79952395995

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 409

EP - 414

BT - 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 40th Annual IEEE International Reliability Physics Symposium, IRPS 2002

Y2 - 7 April 2002 through 11 April 2002

ER -

Lee SJ, Lee CH, Choi CH, Kwong DL. Time-dependent dielectric breakdown in poly-Si CVD HfO₂ gate stack. In 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual. Institute of Electrical and Electronics Engineers Inc. 2002. p. 409-414. 996671. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/RELPHY.2002.996671