THz indium phosphide bipolar transistor technology

M. J.W. Rodwell; J. Rode; H. W. Chiang; P. Choudhary; T. Reed; E. Bloch; S. Danesgar; H. C. Park; A. C. Gossard; B. J. Thibeault; W. Mitchell; M. Urteaga; Z. Griffith; J. Hacker; M. Seo; B. Brar

doi:10.1109/CSICS.2012.6340091

THz indium phosphide bipolar transistor technology

M. J.W. Rodwell
, J. Rode
, H. W. Chiang
, P. Choudhary
, T. Reed
, E. Bloch
, S. Danesgar
, H. C. Park
, A. C. Gossard
, B. J. Thibeault
, W. Mitchell
, M. Urteaga
, Z. Griffith
, J. Hacker
, M. Seo
, B. Brar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Scaling laws and limits of THz indium Phosphide heterojunction bipolar transistors (HBTs) are presented. The primary limits to scaling through the 32 nm / 3 THz node are the resistivity, penetration depth, and current-carrying capability of the emitter and base contacts. A processes flow with refractory dry-etch emitter and base contacts is presented. Beyond the 32 nm node, degenerate injection in the emitter-base junction limits transconductance and impedes scaling. At the 32 nm node, bandwidths will be sufficient for 1.4 THz transmitters and receivers.

Original language	English
Title of host publication	2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest
DOIs	https://doi.org/10.1109/CSICS.2012.6340091
State	Published - 2012
Externally published	Yes
Event	2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - La Jolla, CA, United States Duration: 14 Oct 2012 → 17 Oct 2012

Publication series

Name	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)	1550-8781

Conference

Conference	2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012
Country/Territory	United States
City	La Jolla, CA
Period	14/10/12 → 17/10/12

Keywords

bipolar transistors
THz technology
wireless ICs

Access to Document

10.1109/CSICS.2012.6340091

Cite this

Rodwell, M. J. W., Rode, J., Chiang, H. W., Choudhary, P., Reed, T., Bloch, E., Danesgar, S., Park, H. C., Gossard, A. C., Thibeault, B. J., Mitchell, W., Urteaga, M., Griffith, Z., Hacker, J., Seo, M., & Brar, B. (2012). THz indium phosphide bipolar transistor technology. In 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest Article 6340091 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). https://doi.org/10.1109/CSICS.2012.6340091

@inproceedings{8bcd860b98344ea082e4f1672d06b646,

title = "THz indium phosphide bipolar transistor technology",

abstract = "Scaling laws and limits of THz indium Phosphide heterojunction bipolar transistors (HBTs) are presented. The primary limits to scaling through the 32 nm / 3 THz node are the resistivity, penetration depth, and current-carrying capability of the emitter and base contacts. A processes flow with refractory dry-etch emitter and base contacts is presented. Beyond the 32 nm node, degenerate injection in the emitter-base junction limits transconductance and impedes scaling. At the 32 nm node, bandwidths will be sufficient for 1.4 THz transmitters and receivers.",

keywords = "bipolar transistors, THz technology, wireless ICs",

author = "Rodwell, \{M. J.W.\} and J. Rode and Chiang, \{H. W.\} and P. Choudhary and T. Reed and E. Bloch and S. Danesgar and Park, \{H. C.\} and Gossard, \{A. C.\} and Thibeault, \{B. J.\} and W. Mitchell and M. Urteaga and Z. Griffith and J. Hacker and M. Seo and B. Brar",

year = "2012",

doi = "10.1109/CSICS.2012.6340091",

language = "English",

isbn = "9781467309295",

series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",

booktitle = "2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest",

note = "2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 ; Conference date: 14-10-2012 Through 17-10-2012",

}

Rodwell, MJW, Rode, J, Chiang, HW, Choudhary, P, Reed, T, Bloch, E, Danesgar, S, Park, HC, Gossard, AC, Thibeault, BJ, Mitchell, W, Urteaga, M, Griffith, Z, Hacker, J, Seo, M & Brar, B 2012, THz indium phosphide bipolar transistor technology. in 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest., 6340091, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, United States, 14/10/12. https://doi.org/10.1109/CSICS.2012.6340091

THz indium phosphide bipolar transistor technology. / Rodwell, M. J.W.; Rode, J.; Chiang, H. W. et al.
2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest. 2012. 6340091 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - THz indium phosphide bipolar transistor technology

AU - Rodwell, M. J.W.

AU - Rode, J.

AU - Chiang, H. W.

AU - Choudhary, P.

AU - Reed, T.

AU - Bloch, E.

AU - Danesgar, S.

AU - Park, H. C.

AU - Gossard, A. C.

AU - Thibeault, B. J.

AU - Mitchell, W.

AU - Urteaga, M.

AU - Griffith, Z.

AU - Hacker, J.

AU - Seo, M.

AU - Brar, B.

PY - 2012

Y1 - 2012

N2 - Scaling laws and limits of THz indium Phosphide heterojunction bipolar transistors (HBTs) are presented. The primary limits to scaling through the 32 nm / 3 THz node are the resistivity, penetration depth, and current-carrying capability of the emitter and base contacts. A processes flow with refractory dry-etch emitter and base contacts is presented. Beyond the 32 nm node, degenerate injection in the emitter-base junction limits transconductance and impedes scaling. At the 32 nm node, bandwidths will be sufficient for 1.4 THz transmitters and receivers.

AB - Scaling laws and limits of THz indium Phosphide heterojunction bipolar transistors (HBTs) are presented. The primary limits to scaling through the 32 nm / 3 THz node are the resistivity, penetration depth, and current-carrying capability of the emitter and base contacts. A processes flow with refractory dry-etch emitter and base contacts is presented. Beyond the 32 nm node, degenerate injection in the emitter-base junction limits transconductance and impedes scaling. At the 32 nm node, bandwidths will be sufficient for 1.4 THz transmitters and receivers.

KW - bipolar transistors

KW - THz technology

KW - wireless ICs

UR - https://www.scopus.com/pages/publications/84871134510

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DO - 10.1109/CSICS.2012.6340091

M3 - Conference contribution

AN - SCOPUS:84871134510

SN - 9781467309295

T3 - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

BT - 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest

T2 - 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012

Y2 - 14 October 2012 through 17 October 2012

ER -

THz indium phosphide bipolar transistor technology

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