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Thin-Film Transistors Based on Transition Metal Dichalcogenides

  • Kookmin University
  • Kyung Hee University

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

While graphene is a scientifically and technologically interesting nanomaterial for a variety of applications, the semimetallic nature of graphene severely limits its application in transistors. Recently, a rapidly expanding interest has been given to transition metal dichalcogenides such as MoS2, which have layered crystal structures with a bandgap. The intriguing electrical and optoelectronic properties of transition metal dichalcogenides offer attractive possibilities for many potential applications. In this chapter, we review the historical development and recent progress of thin-film transistors (TFTs) based on MoS2 crystals as MoS2 has been the most extensively investigated transition metal dichalcogenide. In particular, we discuss the materials properties of MoS2, single-layer and multilayer MoS2 transistors, and challenges for MoS2 transistors in electronic and optoelectronic applications.

Original languageEnglish
Title of host publicationNanomaterials, Polymers and Devices
Subtitle of host publicationMaterials Functionalization and Device Fabrication
Publisherwiley
Pages539-561
Number of pages23
ISBN (Electronic)9781118867204
ISBN (Print)9780470048061
DOIs
StatePublished - 10 Jun 2015
Externally publishedYes

Keywords

  • Layered semiconductors
  • MoS2
  • Thin-film transistors
  • Transition metal dichalcogenides
  • Two-dimensional semiconductors

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