Abstract
Here we report on heterojunction PbS quantum dot (QD) solar cells using RF magnetron sputtered CdS as the n-type window layer. These solar cells generate large open circuit voltage compared to previously reported PbS-QD solar cells. Our investigations of this device design show an optimized CdS film thickness of 70 nm and an optimized PbS QD diameter of ∼2.7 nm, corresponding to a bandgap energy of ∼1.57 eV. Under simulated AM1.5 G illumination, we attain short circuit current as high as 12 mA-cm-2, an open circuit voltage of 0.65 V and efficiency as high as 3.3%.
| Original language | English |
|---|---|
| Pages (from-to) | 476-482 |
| Number of pages | 7 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 117 |
| DOIs | |
| State | Published - 2013 |
| Externally published | Yes |
Keywords
- CdS
- PbS
- Quantum dot
- Solar cell
- Thin film