Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

Han Ki Kim; Sang Woo Kim; Do Geun Kim; Jae Wook Kang; Myung Soo Kim; Woon Jo Cho

doi:10.1016/j.tsf.2006.11.030

Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

Han Ki Kim
, Sang Woo Kim
, Do Geun Kim
, Jae Wook Kang
, Myung Soo Kim
, Woon Jo Cho

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The characteristics of an SiN_x passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of ∼ 10¹¹ electrons/cm³ formed by nine straight antennas connected in parallel, a high-density SiN_x passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 °C. Even at a low substrate temperature, single SiN_x passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 × 10^{- 2} g/m²/day and a transparency of ∼ 85% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiN_x layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiN_x deposition process.

Original language	English
Pages (from-to)	4758-4762
Number of pages	5
Journal	Thin Solid Films
Volume	515
Issue number	11
DOIs	https://doi.org/10.1016/j.tsf.2006.11.030
State	Published - 9 Apr 2007
Externally published	Yes

Keywords

ICP-CVD
SiN
Straight antenna
TOLED

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10.1016/j.tsf.2006.11.030

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@article{0f14e0f243ef400fb65855fcce719104,

title = "Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition",

abstract = "The characteristics of an SiNx passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of ∼ 1011 electrons/cm3 formed by nine straight antennas connected in parallel, a high-density SiNx passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 °C. Even at a low substrate temperature, single SiNx passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 × 10- 2 g/m2/day and a transparency of ∼ 85\% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiNx layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiNx deposition process.",

keywords = "ICP-CVD, SiN, Straight antenna, TOLED",

author = "Kim, \{Han Ki\} and Kim, \{Sang Woo\} and Kim, \{Do Geun\} and Kang, \{Jae Wook\} and Kim, \{Myung Soo\} and Cho, \{Woon Jo\}",

year = "2007",

month = apr,

day = "9",

doi = "10.1016/j.tsf.2006.11.030",

language = "English",

volume = "515",

pages = "4758--4762",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "11",

}

TY - JOUR

T1 - Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

AU - Kim, Han Ki

AU - Kim, Sang Woo

AU - Kim, Do Geun

AU - Kang, Jae Wook

AU - Kim, Myung Soo

AU - Cho, Woon Jo

PY - 2007/4/9

Y1 - 2007/4/9

N2 - The characteristics of an SiNx passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of ∼ 1011 electrons/cm3 formed by nine straight antennas connected in parallel, a high-density SiNx passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 °C. Even at a low substrate temperature, single SiNx passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 × 10- 2 g/m2/day and a transparency of ∼ 85% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiNx layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiNx deposition process.

AB - The characteristics of an SiNx passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of ∼ 1011 electrons/cm3 formed by nine straight antennas connected in parallel, a high-density SiNx passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 °C. Even at a low substrate temperature, single SiNx passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 × 10- 2 g/m2/day and a transparency of ∼ 85% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiNx layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiNx deposition process.

KW - ICP-CVD

KW - SiN

KW - Straight antenna

KW - TOLED

UR - https://www.scopus.com/pages/publications/33847226312

U2 - 10.1016/j.tsf.2006.11.030

DO - 10.1016/j.tsf.2006.11.030

M3 - Article

AN - SCOPUS:33847226312

SN - 0040-6090

VL - 515

SP - 4758

EP - 4762

JO - Thin Solid Films

JF - Thin Solid Films

IS - 11

ER -

Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

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Keywords

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