Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

Han Ki Kim; Sang Woo Kim; Do Geun Kim; Jae Wook Kang; Myung Soo Kim; Woon Jo Cho

doi:10.1016/j.tsf.2006.11.030

Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

Han Ki Kim, Sang Woo Kim, Do Geun Kim, Jae Wook Kang, Myung Soo Kim, Woon Jo Cho

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The characteristics of an SiN_x passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of ∼ 10¹¹ electrons/cm³ formed by nine straight antennas connected in parallel, a high-density SiN_x passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 °C. Even at a low substrate temperature, single SiN_x passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 × 10^{- 2} g/m²/day and a transparency of ∼ 85% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiN_x layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiN_x deposition process.

Original language	English
Pages (from-to)	4758-4762
Number of pages	5
Journal	Thin Solid Films
Volume	515
Issue number	11
DOIs	https://doi.org/10.1016/j.tsf.2006.11.030
State	Published - 9 Apr 2007
Externally published	Yes

Keywords

ICP-CVD
SiN
Straight antenna
TOLED

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10.1016/j.tsf.2006.11.030

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@article{0f14e0f243ef400fb65855fcce719104,

title = "Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition",

abstract = "The characteristics of an SiNx passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of ∼ 1011 electrons/cm3 formed by nine straight antennas connected in parallel, a high-density SiNx passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 °C. Even at a low substrate temperature, single SiNx passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 × 10- 2 g/m2/day and a transparency of ∼ 85\% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiNx layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiNx deposition process.",

keywords = "ICP-CVD, SiN, Straight antenna, TOLED",

author = "Kim, \{Han Ki\} and Kim, \{Sang Woo\} and Kim, \{Do Geun\} and Kang, \{Jae Wook\} and Kim, \{Myung Soo\} and Cho, \{Woon Jo\}",

year = "2007",

month = apr,

day = "9",

doi = "10.1016/j.tsf.2006.11.030",

language = "English",

volume = "515",

pages = "4758--4762",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

AU - Kim, Han Ki

AU - Kim, Sang Woo

AU - Kim, Do Geun

AU - Kang, Jae Wook

AU - Kim, Myung Soo

AU - Cho, Woon Jo

PY - 2007/4/9

Y1 - 2007/4/9

N2 - The characteristics of an SiNx passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of ∼ 1011 electrons/cm3 formed by nine straight antennas connected in parallel, a high-density SiNx passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 °C. Even at a low substrate temperature, single SiNx passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 × 10- 2 g/m2/day and a transparency of ∼ 85% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiNx layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiNx deposition process.

AB - The characteristics of an SiNx passivation layer grown by a specially designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system with straight antennas for the top-emitting organic light emitting diodes (TOLEDs) are investigated. Using a high-density plasma on the order of ∼ 1011 electrons/cm3 formed by nine straight antennas connected in parallel, a high-density SiNx passivation layer was deposited on a transparent Mg-Ag cathode at a substrate temperature of 40 °C. Even at a low substrate temperature, single SiNx passivation layer prepared by ICP-CVD showed a low water vapor transmission rate of 5 × 10- 2 g/m2/day and a transparency of ∼ 85% respectively. In addition, current-voltage-luminescence results of the TOLED passivated by the SiNx layer indicated that the electrical and optical properties of the TOLED were not affected by the high-density plasma during the SiNx deposition process.

KW - ICP-CVD

KW - SiN

KW - Straight antenna

KW - TOLED

UR - https://www.scopus.com/pages/publications/33847226312

U2 - 10.1016/j.tsf.2006.11.030

DO - 10.1016/j.tsf.2006.11.030

M3 - Article

AN - SCOPUS:33847226312

SN - 0040-6090

VL - 515

SP - 4758

EP - 4762

JO - Thin Solid Films

JF - Thin Solid Films

IS - 11

ER -

Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition

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Keywords

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