Abstract
The thermally stable hole transport layer (HTL) materials, 1,4-bis[(N,N′-di(2-naphthyl)-N,N′-diphenyl)aminophenyl]triphenylene (NPAPT) and 1,4-bis[(N,N′-di(2-naphthyl)-N,N′-diphenyl) aminophenyl]-2,3-diphenyl triphenylene (NPAPPT), were synthesized and the device performances of the organic light-emitting diodes (OLEDs) with NPAPT and NPAPPT as a hole transport layer were investigated. The glass transition temperatures of NPAPT and NPAPPT could be enhanced to 153 °C and 157 °C by the introduction of a rigid triphenylene backbone in the main chain. The use of NPAPT and NPAPPT as a HTL for OLEDs lowered the driving voltage and enhanced the light-emitting efficiency. The power efficiencies of triphenylene-based devices with tris(8-hydroxyquinoline)aluminum as an emitting material could be improved by 20% compared with that of N,N′-di(naphthalene-1-yl)-N,N′- diphenyl benzidine based devices.
| Original language | English |
|---|---|
| Pages (from-to) | 5917-5923 |
| Number of pages | 7 |
| Journal | Thin Solid Films |
| Volume | 519 |
| Issue number | 18 |
| DOIs | |
| State | Published - 1 Jul 2011 |
| Externally published | Yes |
Keywords
- 1,4-bis[(N,N′-di(2-naphthyl)-N,N′-diphenyl)aminophenyl]-2, 3-diphenyl triphenylene
- 1,4-bis[(N,N′-di(2-naphthyl)-N,N′-diphenyl)aminophenyl]triphenylene
- Hole transporting layer
- Organic light emitting diodes
- Triphenylene