Thermally stable MnIr based spin valve type tunnel junction with nano-oxide layer over 400°C

S. Y. Yoon; Y. I. Kim; D. H. Lee; Y. S. Kim; D. H. Yoon; S. J. Suh

doi:10.1016/j.mseb.2004.02.017

Thermally stable MnIr based spin valve type tunnel junction with nano-oxide layer over 400°C

S. Y. Yoon, Y. I. Kim, D. H. Lee, Y. S. Kim, D. H. Yoon, S. J. Suh

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have investigated the annealing effect of magnetic tunnel junctions (MTJs) with or without nano-oxide layer (NOL). For MTJ without NOL, TMR ratio increased up to 300°C and the highest value was 21.6%. On the other hand, TMR ratio of MTJ with NOL increased up to 400°C and the highest value was 22.7%. As shown in the auger electron spectroscopy (AES) and transmission electron microscopy (TEM) results, this improved thermal stability is due to NOL in the pinned layer. Mn diffusion into Al-O barrier is blocked and interface of Al-O is smothered by NOL. These may be the main reasons of high thermal stability of MTJ with NOL.

Original language	English
Pages (from-to)	265-267
Number of pages	3
Journal	Materials Science and Engineering B
Volume	110
Issue number	3
DOIs	https://doi.org/10.1016/j.mseb.2004.02.017
State	Published - 25 Jul 2004

Keywords

Interface
Mn diffusion
NOL
Thermal stability

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10.1016/j.mseb.2004.02.017

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title = "Thermally stable MnIr based spin valve type tunnel junction with nano-oxide layer over 400°C",

abstract = "We have investigated the annealing effect of magnetic tunnel junctions (MTJs) with or without nano-oxide layer (NOL). For MTJ without NOL, TMR ratio increased up to 300°C and the highest value was 21.6\%. On the other hand, TMR ratio of MTJ with NOL increased up to 400°C and the highest value was 22.7\%. As shown in the auger electron spectroscopy (AES) and transmission electron microscopy (TEM) results, this improved thermal stability is due to NOL in the pinned layer. Mn diffusion into Al-O barrier is blocked and interface of Al-O is smothered by NOL. These may be the main reasons of high thermal stability of MTJ with NOL.",

keywords = "Interface, Mn diffusion, NOL, Thermal stability",

author = "Yoon, \{S. Y.\} and Kim, \{Y. I.\} and Lee, \{D. H.\} and Kim, \{Y. S.\} and Yoon, \{D. H.\} and Suh, \{S. J.\}",

year = "2004",

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doi = "10.1016/j.mseb.2004.02.017",

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journal = "Materials Science and Engineering B",

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TY - JOUR

T1 - Thermally stable MnIr based spin valve type tunnel junction with nano-oxide layer over 400°C

AU - Yoon, S. Y.

AU - Kim, Y. I.

AU - Lee, D. H.

AU - Kim, Y. S.

AU - Yoon, D. H.

AU - Suh, S. J.

PY - 2004/7/25

Y1 - 2004/7/25

N2 - We have investigated the annealing effect of magnetic tunnel junctions (MTJs) with or without nano-oxide layer (NOL). For MTJ without NOL, TMR ratio increased up to 300°C and the highest value was 21.6%. On the other hand, TMR ratio of MTJ with NOL increased up to 400°C and the highest value was 22.7%. As shown in the auger electron spectroscopy (AES) and transmission electron microscopy (TEM) results, this improved thermal stability is due to NOL in the pinned layer. Mn diffusion into Al-O barrier is blocked and interface of Al-O is smothered by NOL. These may be the main reasons of high thermal stability of MTJ with NOL.

AB - We have investigated the annealing effect of magnetic tunnel junctions (MTJs) with or without nano-oxide layer (NOL). For MTJ without NOL, TMR ratio increased up to 300°C and the highest value was 21.6%. On the other hand, TMR ratio of MTJ with NOL increased up to 400°C and the highest value was 22.7%. As shown in the auger electron spectroscopy (AES) and transmission electron microscopy (TEM) results, this improved thermal stability is due to NOL in the pinned layer. Mn diffusion into Al-O barrier is blocked and interface of Al-O is smothered by NOL. These may be the main reasons of high thermal stability of MTJ with NOL.

KW - Interface

KW - Mn diffusion

KW - NOL

KW - Thermal stability

UR - https://www.scopus.com/pages/publications/2942596465

U2 - 10.1016/j.mseb.2004.02.017

DO - 10.1016/j.mseb.2004.02.017

M3 - Article

AN - SCOPUS:2942596465

SN - 0921-5107

VL - 110

SP - 265

EP - 267

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 3

ER -

Thermally stable MnIr based spin valve type tunnel junction with nano-oxide layer over 400°C

Abstract

Keywords

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