Abstract
Zinc-oxide films were deposited, by a RF (radio-frequency) sputtering system, on p-type Si (111) substrates at room temperature. The films were annealed at various temperatures in order to study the annealing temperature dependence of the diode characteristics of n-ZnO/p-Si (111). An n-ZnO/p-Si heterojunction diode was fabricated by using a photolithographic method. The diode characteristics were investigated by using current - voltage measurements (HP4145B). The effect of annealing temperature on the structural and the morphological property was investigated by using X-ray diffraction (XRD) and atomic force microscopy (AFM). The turn-on voltage of the diodes was about 1.4 ∼ 1.7 V and the current-voltage curve revealed an excellent rectification behavior. The diode characteristics changed with annealing temperature and n-ZnO/p-Si (111) heterojunction diodes exhibited yellow light at 13 ∼ 15 V.
| Original language | English |
|---|---|
| Pages (from-to) | 901-905 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 54 |
| Issue number | 2 PART 1 |
| DOIs | |
| State | Published - Feb 2009 |
Keywords
- Heterojunction
- LED
- p-Si
- Thermal annealing
- ZnO
