The synthesis of novel polystyrene-SiO2 composite abrasive for CMP slurry

Hongyi Qin; Mingu Kim; Sunjae Jang; Yang Xu; Taesung Kim

doi:10.1149/05201.0551ecst

The synthesis of novel polystyrene-SiO₂ composite abrasive for CMP slurry

Hongyi Qin
, Mingu Kim
, Sunjae Jang
, Yang Xu
, Taesung Kim

Department of Mechanical Engineering

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

We developed a novel method to synthesize the polystyrene-SiO₂ composite abrasive with raspberry structure. The SiO₂ nanoparticles were embedded by the polystyrene microsphere. This raspberry-like composite abrasive had lots of advantages for CMP abrasive, for example, the hardness of composite abrasive could easily be controlled by the proportion of SiO ₂ and the cushioning effect of soft polystyrene core could decrease the excessive mechanical damage caused by hard silica abrasive. Moreover, this structure made sure the stability of composite abrasive in the polishing process. The shape of composite particles was sphere and monodisperse. The size of polystyrene-SiO₂ could be controlled in the range from 50 ~ 300 nm by adjusting the amount of styrene monomer. The removal rate in polishing test depended on the proportion of SiO₂ and hardness of composite abrasive.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2013, CSTIC 2013
Pages	551-556
Number of pages	6
Edition	1
DOIs	https://doi.org/10.1149/05201.0551ecst
State	Published - 2013
Event	China Semiconductor Technology International Conference 2013, CSTIC 2013 - Shanghai, China Duration: 19 Mar 2013 → 21 Mar 2013

Publication series

Name	ECS Transactions
Number	1
Volume	52
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	China Semiconductor Technology International Conference 2013, CSTIC 2013
Country/Territory	China
City	Shanghai
Period	19/03/13 → 21/03/13

Access to Document

10.1149/05201.0551ecst

Cite this

@inproceedings{8f63c79fb47641738ced91a51d2ab680,

title = "The synthesis of novel polystyrene-SiO2 composite abrasive for CMP slurry",

abstract = "We developed a novel method to synthesize the polystyrene-SiO2 composite abrasive with raspberry structure. The SiO2 nanoparticles were embedded by the polystyrene microsphere. This raspberry-like composite abrasive had lots of advantages for CMP abrasive, for example, the hardness of composite abrasive could easily be controlled by the proportion of SiO 2 and the cushioning effect of soft polystyrene core could decrease the excessive mechanical damage caused by hard silica abrasive. Moreover, this structure made sure the stability of composite abrasive in the polishing process. The shape of composite particles was sphere and monodisperse. The size of polystyrene-SiO2 could be controlled in the range from 50 \textasciitilde{} 300 nm by adjusting the amount of styrene monomer. The removal rate in polishing test depended on the proportion of SiO2 and hardness of composite abrasive.",

author = "Hongyi Qin and Mingu Kim and Sunjae Jang and Yang Xu and Taesung Kim",

year = "2013",

doi = "10.1149/05201.0551ecst",

language = "English",

isbn = "9781607683810",

series = "ECS Transactions",

number = "1",

pages = "551--556",

booktitle = "China Semiconductor Technology International Conference 2013, CSTIC 2013",

edition = "1",

note = "China Semiconductor Technology International Conference 2013, CSTIC 2013 ; Conference date: 19-03-2013 Through 21-03-2013",

}

Qin, H, Kim, M, Jang, S, Xu, Y & Kim, T 2013, The synthesis of novel polystyrene-SiO₂ composite abrasive for CMP slurry. in China Semiconductor Technology International Conference 2013, CSTIC 2013. 1 edn, ECS Transactions, no. 1, vol. 52, pp. 551-556, China Semiconductor Technology International Conference 2013, CSTIC 2013, Shanghai, China, 19/03/13. https://doi.org/10.1149/05201.0551ecst

TY - GEN

T1 - The synthesis of novel polystyrene-SiO2 composite abrasive for CMP slurry

AU - Qin, Hongyi

AU - Kim, Mingu

AU - Jang, Sunjae

AU - Xu, Yang

AU - Kim, Taesung

PY - 2013

Y1 - 2013

N2 - We developed a novel method to synthesize the polystyrene-SiO2 composite abrasive with raspberry structure. The SiO2 nanoparticles were embedded by the polystyrene microsphere. This raspberry-like composite abrasive had lots of advantages for CMP abrasive, for example, the hardness of composite abrasive could easily be controlled by the proportion of SiO 2 and the cushioning effect of soft polystyrene core could decrease the excessive mechanical damage caused by hard silica abrasive. Moreover, this structure made sure the stability of composite abrasive in the polishing process. The shape of composite particles was sphere and monodisperse. The size of polystyrene-SiO2 could be controlled in the range from 50 ~ 300 nm by adjusting the amount of styrene monomer. The removal rate in polishing test depended on the proportion of SiO2 and hardness of composite abrasive.

AB - We developed a novel method to synthesize the polystyrene-SiO2 composite abrasive with raspberry structure. The SiO2 nanoparticles were embedded by the polystyrene microsphere. This raspberry-like composite abrasive had lots of advantages for CMP abrasive, for example, the hardness of composite abrasive could easily be controlled by the proportion of SiO 2 and the cushioning effect of soft polystyrene core could decrease the excessive mechanical damage caused by hard silica abrasive. Moreover, this structure made sure the stability of composite abrasive in the polishing process. The shape of composite particles was sphere and monodisperse. The size of polystyrene-SiO2 could be controlled in the range from 50 ~ 300 nm by adjusting the amount of styrene monomer. The removal rate in polishing test depended on the proportion of SiO2 and hardness of composite abrasive.

UR - https://www.scopus.com/pages/publications/84875945964

U2 - 10.1149/05201.0551ecst

DO - 10.1149/05201.0551ecst

M3 - Conference contribution

AN - SCOPUS:84875945964

SN - 9781607683810

T3 - ECS Transactions

SP - 551

EP - 556

BT - China Semiconductor Technology International Conference 2013, CSTIC 2013

T2 - China Semiconductor Technology International Conference 2013, CSTIC 2013

Y2 - 19 March 2013 through 21 March 2013

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