The properties of n-μc-SiO:H inter-layers for thin-film silicon tandem solar cells

Jin Won Chung; Eun Lee Ji; Hoon Jang Ji; Chul Lee Jeong; Jun Sik Cho; Kuk Kim Young; Junsin Yi; Ok Park O; Jinsoo Song; Hoon Yoon Kyung

doi:10.1109/PVSC.2009.5411174

The properties of n-μc-SiO:H inter-layers for thin-film silicon tandem solar cells

Jin Won Chung
, Eun Lee Ji
, Hoon Jang Ji
, Chul Lee Jeong
, Jun Sik Cho
, Kuk Kim Young
, Junsin Yi
, Ok Park O
, Jinsoo Song
, Hoon Yoon Kyung

Department of Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The n-type hydrogenated microcrystalline silicon-incorporated silicon oxide (n-μc-SiO:H) films are prepared by 13.56MHz plasma enhanced chemical vapor deposition (rf-PECVD) using SiH ₄, H ₂ and CO ₂ gases for an inter-layer between the amorphous silicon (a-Si:H) top-cell and the microcrystalline silicon (μc-Si:H) bottom-cell in the thin-film silicon tandem solar cells. The optical and electrical properties of n-μc-SiO:H prepared by varying deposition conditions are investigated. The refractive indices of the films are 2.1-2.7 at the wavelength of 600nm and the electrical conductivity is ∼ 5x10 ^-3 S/cm. Compared to ZnO:Al inter-layer, the n-μc-SiO:H provides reduced current loss of μc-Si:H bottom-cells as well as enhanced current gain of a-Si:H top-cell which might be due to the reduced absorption of incident light in the n-μc-SiO:H inter-layer. An analysis on tunnel recombination junction using current-voltage measurements shows the non-ohmic behavior when crystalline volume fraction and conductivity of inter-layer are low, resulting in the reduction of the FF and V _oc in solar cells. The initial conversion efficiency of 10.66% is achieved in thin film silicon tandem solar cells with n-μc-SiO:H inter-layer.

Original language	English
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	759-762
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2009.5411174
State	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	7/06/09 → 12/06/09

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.2009.5411174

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Chung, J. W., Ji, E. L., Ji, H. J., Jeong, C. L., Cho, J. S., Young, K. K., Yi, J., O, O. P., Song, J., & Kyung, H. Y. (2009). The properties of n-μc-SiO:H inter-layers for thin-film silicon tandem solar cells. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 759-762). Article 5411174 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411174

@inproceedings{7cdfeeb4446c415580c4bca6c6bbdb78,

title = "The properties of n-μc-SiO:H inter-layers for thin-film silicon tandem solar cells",

abstract = "The n-type hydrogenated microcrystalline silicon-incorporated silicon oxide (n-μc-SiO:H) films are prepared by 13.56MHz plasma enhanced chemical vapor deposition (rf-PECVD) using SiH 4, H 2 and CO 2 gases for an inter-layer between the amorphous silicon (a-Si:H) top-cell and the microcrystalline silicon (μc-Si:H) bottom-cell in the thin-film silicon tandem solar cells. The optical and electrical properties of n-μc-SiO:H prepared by varying deposition conditions are investigated. The refractive indices of the films are 2.1-2.7 at the wavelength of 600nm and the electrical conductivity is ∼ 5x10 -3 S/cm. Compared to ZnO:Al inter-layer, the n-μc-SiO:H provides reduced current loss of μc-Si:H bottom-cells as well as enhanced current gain of a-Si:H top-cell which might be due to the reduced absorption of incident light in the n-μc-SiO:H inter-layer. An analysis on tunnel recombination junction using current-voltage measurements shows the non-ohmic behavior when crystalline volume fraction and conductivity of inter-layer are low, resulting in the reduction of the FF and V oc in solar cells. The initial conversion efficiency of 10.66\% is achieved in thin film silicon tandem solar cells with n-μc-SiO:H inter-layer.",

author = "Chung, \{Jin Won\} and Ji, \{Eun Lee\} and Ji, \{Hoon Jang\} and Jeong, \{Chul Lee\} and Cho, \{Jun Sik\} and Young, \{Kuk Kim\} and Junsin Yi and O, \{Ok Park\} and Jinsoo Song and Kyung, \{Hoon Yoon\}",

year = "2009",

doi = "10.1109/PVSC.2009.5411174",

language = "English",

isbn = "9781424429509",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "759--762",

booktitle = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Chung, JW, Ji, EL, Ji, HJ, Jeong, CL, Cho, JS, Young, KK, Yi, J, O, OP, Song, J & Kyung, HY 2009, The properties of n-μc-SiO:H inter-layers for thin-film silicon tandem solar cells. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411174, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 759-762, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 7/06/09. https://doi.org/10.1109/PVSC.2009.5411174

The properties of n-μc-SiO:H inter-layers for thin-film silicon tandem solar cells. / Chung, Jin Won; Ji, Eun Lee; Ji, Hoon Jang et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 759-762 5411174 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The properties of n-μc-SiO:H inter-layers for thin-film silicon tandem solar cells

AU - Chung, Jin Won

AU - Ji, Eun Lee

AU - Ji, Hoon Jang

AU - Jeong, Chul Lee

AU - Cho, Jun Sik

AU - Young, Kuk Kim

AU - Yi, Junsin

AU - O, Ok Park

AU - Song, Jinsoo

AU - Kyung, Hoon Yoon

PY - 2009

Y1 - 2009

N2 - The n-type hydrogenated microcrystalline silicon-incorporated silicon oxide (n-μc-SiO:H) films are prepared by 13.56MHz plasma enhanced chemical vapor deposition (rf-PECVD) using SiH 4, H 2 and CO 2 gases for an inter-layer between the amorphous silicon (a-Si:H) top-cell and the microcrystalline silicon (μc-Si:H) bottom-cell in the thin-film silicon tandem solar cells. The optical and electrical properties of n-μc-SiO:H prepared by varying deposition conditions are investigated. The refractive indices of the films are 2.1-2.7 at the wavelength of 600nm and the electrical conductivity is ∼ 5x10 -3 S/cm. Compared to ZnO:Al inter-layer, the n-μc-SiO:H provides reduced current loss of μc-Si:H bottom-cells as well as enhanced current gain of a-Si:H top-cell which might be due to the reduced absorption of incident light in the n-μc-SiO:H inter-layer. An analysis on tunnel recombination junction using current-voltage measurements shows the non-ohmic behavior when crystalline volume fraction and conductivity of inter-layer are low, resulting in the reduction of the FF and V oc in solar cells. The initial conversion efficiency of 10.66% is achieved in thin film silicon tandem solar cells with n-μc-SiO:H inter-layer.

AB - The n-type hydrogenated microcrystalline silicon-incorporated silicon oxide (n-μc-SiO:H) films are prepared by 13.56MHz plasma enhanced chemical vapor deposition (rf-PECVD) using SiH 4, H 2 and CO 2 gases for an inter-layer between the amorphous silicon (a-Si:H) top-cell and the microcrystalline silicon (μc-Si:H) bottom-cell in the thin-film silicon tandem solar cells. The optical and electrical properties of n-μc-SiO:H prepared by varying deposition conditions are investigated. The refractive indices of the films are 2.1-2.7 at the wavelength of 600nm and the electrical conductivity is ∼ 5x10 -3 S/cm. Compared to ZnO:Al inter-layer, the n-μc-SiO:H provides reduced current loss of μc-Si:H bottom-cells as well as enhanced current gain of a-Si:H top-cell which might be due to the reduced absorption of incident light in the n-μc-SiO:H inter-layer. An analysis on tunnel recombination junction using current-voltage measurements shows the non-ohmic behavior when crystalline volume fraction and conductivity of inter-layer are low, resulting in the reduction of the FF and V oc in solar cells. The initial conversion efficiency of 10.66% is achieved in thin film silicon tandem solar cells with n-μc-SiO:H inter-layer.

UR - https://www.scopus.com/pages/publications/77951616736

U2 - 10.1109/PVSC.2009.5411174

DO - 10.1109/PVSC.2009.5411174

M3 - Conference contribution

AN - SCOPUS:77951616736

SN - 9781424429509

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 759

EP - 762

BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

Y2 - 7 June 2009 through 12 June 2009

ER -

The properties of n-μc-SiO:H inter-layers for thin-film silicon tandem solar cells

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