The properties of fluoride/glass and fluoride/silicon

Jae kyung Ko; Do young Kim; Joong Hyun Park; Seok Won Choi; Sung Hyun Park; Junsin Yi

doi:10.1016/S0040-6090(02)01199-9

The properties of fluoride/glass and fluoride/silicon

Jae kyung Ko
, Do young Kim
, Joong Hyun Park
, Seok Won Choi
, Sung Hyun Park
, Junsin Yi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for silicon (Si) film growth. The X-ray diffraction analysis on CaF₂/glass illustrated (2 2 0) preferential orientation and showed lattice mismatch less than 5% with Si. We achieved a fluoride film with breakdown electric field higher than 1.27 MV/cm, leakage current density less than 10^-8 A/cm², and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon (μc-Si) film growth at a low substrate temperature of 300 °C by using a CaF₂/glass substrate. The μc-Si films exhibited crystallization in (1 1 1) and (2 2 0) planes, grain size of 700 Å, crystalline volume fraction over 65%, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than 4 × 10^-7 S/cm.

Original language	English
Pages (from-to)	259-265
Number of pages	7
Journal	Thin Solid Films
Volume	427
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)01199-9
State	Published - 3 Mar 2003
Event	E-MRS, K - Strasbourg, France Duration: 18 Jun 2003 → 21 Jun 2003

Keywords

Fluoride
Interface state
Lattice mismatch
Metal/fluoride/metal
Metal/fluoride/Si
Microcrystalline Si

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10.1016/S0040-6090(02)01199-9

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title = "The properties of fluoride/glass and fluoride/silicon",

abstract = "Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for silicon (Si) film growth. The X-ray diffraction analysis on CaF2/glass illustrated (2 2 0) preferential orientation and showed lattice mismatch less than 5\% with Si. We achieved a fluoride film with breakdown electric field higher than 1.27 MV/cm, leakage current density less than 10-8 A/cm2, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon (μc-Si) film growth at a low substrate temperature of 300 °C by using a CaF2/glass substrate. The μc-Si films exhibited crystallization in (1 1 1) and (2 2 0) planes, grain size of 700 {\AA}, crystalline volume fraction over 65\%, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than 4 × 10-7 S/cm.",

keywords = "Fluoride, Interface state, Lattice mismatch, Metal/fluoride/metal, Metal/fluoride/Si, Microcrystalline Si",

author = "Ko, \{Jae kyung\} and Kim, \{Do young\} and Park, \{Joong Hyun\} and Choi, \{Seok Won\} and Park, \{Sung Hyun\} and Junsin Yi",

year = "2003",

month = mar,

day = "3",

doi = "10.1016/S0040-6090(02)01199-9",

language = "English",

volume = "427",

pages = "259--265",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

note = "E-MRS, K ; Conference date: 18-06-2003 Through 21-06-2003",

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TY - JOUR

T1 - The properties of fluoride/glass and fluoride/silicon

AU - Ko, Jae kyung

AU - Kim, Do young

AU - Park, Joong Hyun

AU - Choi, Seok Won

AU - Park, Sung Hyun

AU - Yi, Junsin

PY - 2003/3/3

Y1 - 2003/3/3

N2 - Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for silicon (Si) film growth. The X-ray diffraction analysis on CaF2/glass illustrated (2 2 0) preferential orientation and showed lattice mismatch less than 5% with Si. We achieved a fluoride film with breakdown electric field higher than 1.27 MV/cm, leakage current density less than 10-8 A/cm2, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon (μc-Si) film growth at a low substrate temperature of 300 °C by using a CaF2/glass substrate. The μc-Si films exhibited crystallization in (1 1 1) and (2 2 0) planes, grain size of 700 Å, crystalline volume fraction over 65%, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than 4 × 10-7 S/cm.

AB - Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for silicon (Si) film growth. The X-ray diffraction analysis on CaF2/glass illustrated (2 2 0) preferential orientation and showed lattice mismatch less than 5% with Si. We achieved a fluoride film with breakdown electric field higher than 1.27 MV/cm, leakage current density less than 10-8 A/cm2, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon (μc-Si) film growth at a low substrate temperature of 300 °C by using a CaF2/glass substrate. The μc-Si films exhibited crystallization in (1 1 1) and (2 2 0) planes, grain size of 700 Å, crystalline volume fraction over 65%, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than 4 × 10-7 S/cm.

KW - Fluoride

KW - Interface state

KW - Lattice mismatch

KW - Metal/fluoride/metal

KW - Metal/fluoride/Si

KW - Microcrystalline Si

UR - https://www.scopus.com/pages/publications/0037416536

U2 - 10.1016/S0040-6090(02)01199-9

DO - 10.1016/S0040-6090(02)01199-9

M3 - Conference article

AN - SCOPUS:0037416536

SN - 0040-6090

VL - 427

SP - 259

EP - 265

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - E-MRS, K

Y2 - 18 June 2003 through 21 June 2003

ER -

The properties of fluoride/glass and fluoride/silicon

Abstract

Keywords

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