The insulator-quantum hall-insulator transitions in a two-dimensional GaAs system containing self-assembled InAs quantum dots

Gil Ho Kim, C. T. Liang, C. F. Huang, D. A. Ritchie

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We have studied insulator-quantum Hall-insulator (I-QH-I) transitions in a two-dimensional electron gas containing self-assembled InAs quantum dots. Our experimental results demonstrate that localization and Landau quantization can coexist. We suggest that the effects due to the modulation of the density of states are important to the scaling behavior in the vicinity of the observed I-QH-I transitions.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages575-576
Number of pages2
DOIs
StatePublished - 30 Jun 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/TerritoryUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

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