The influence of phonon scatterings on the thermal conductivity of SiGe nanowires

Liang Yin; Eun Kyung Lee; Jong Woon Lee; Dongmok Whang; Byoung Lyong Choi; Choongho Yu

doi:10.1063/1.4737909

The influence of phonon scatterings on the thermal conductivity of SiGe nanowires

Liang Yin, Eun Kyung Lee, Jong Woon Lee, Dongmok Whang, Byoung Lyong Choi, Choongho Yu

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

The thermal conductivities of SiGe alloy nanowires with different Ge concentrations and diameters were measured at 60-450 K, and all the nanowires for the measurements were characterized by electron microscopies for accurately determining dimensions and atomic concentrations. With 37-63 at. Ge concentrations and 44-60 nm diameters, their thermal conductivities approached to the minimum thermal conductivity of SiGe alloys due to strong phonon scatterings. This may suggest these parameters are sufficient to result in the smallest achievable thermal conductivity with SiGe in practice. A parallel resistor model was employed to investigate the influence of silicon oxide layers on their thermal conductivities.

Original language	English
Article number	043114
Journal	Applied Physics Letters
Volume	101
Issue number	4
DOIs	https://doi.org/10.1063/1.4737909
State	Published - 23 Jul 2012

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abstract = "The thermal conductivities of SiGe alloy nanowires with different Ge concentrations and diameters were measured at 60-450 K, and all the nanowires for the measurements were characterized by electron microscopies for accurately determining dimensions and atomic concentrations. With 37-63 at. Ge concentrations and 44-60 nm diameters, their thermal conductivities approached to the minimum thermal conductivity of SiGe alloys due to strong phonon scatterings. This may suggest these parameters are sufficient to result in the smallest achievable thermal conductivity with SiGe in practice. A parallel resistor model was employed to investigate the influence of silicon oxide layers on their thermal conductivities.",

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AU - Yin, Liang

AU - Kyung Lee, Eun

AU - Woon Lee, Jong

AU - Whang, Dongmok

AU - Lyong Choi, Byoung

AU - Yu, Choongho

PY - 2012/7/23

Y1 - 2012/7/23

N2 - The thermal conductivities of SiGe alloy nanowires with different Ge concentrations and diameters were measured at 60-450 K, and all the nanowires for the measurements were characterized by electron microscopies for accurately determining dimensions and atomic concentrations. With 37-63 at. Ge concentrations and 44-60 nm diameters, their thermal conductivities approached to the minimum thermal conductivity of SiGe alloys due to strong phonon scatterings. This may suggest these parameters are sufficient to result in the smallest achievable thermal conductivity with SiGe in practice. A parallel resistor model was employed to investigate the influence of silicon oxide layers on their thermal conductivities.

AB - The thermal conductivities of SiGe alloy nanowires with different Ge concentrations and diameters were measured at 60-450 K, and all the nanowires for the measurements were characterized by electron microscopies for accurately determining dimensions and atomic concentrations. With 37-63 at. Ge concentrations and 44-60 nm diameters, their thermal conductivities approached to the minimum thermal conductivity of SiGe alloys due to strong phonon scatterings. This may suggest these parameters are sufficient to result in the smallest achievable thermal conductivity with SiGe in practice. A parallel resistor model was employed to investigate the influence of silicon oxide layers on their thermal conductivities.

UR - https://www.scopus.com/pages/publications/84864495589

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

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ER -

The influence of phonon scatterings on the thermal conductivity of SiGe nanowires

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