The etching mechanism of (Zr0.8Sn0.2)TiO4(ZST) film by using Cl2/O2-gas plasma

K. H. Kwon; A. M. Efremov; G. Y. Yeom; Y. I. Kang

The etching mechanism of (Zr_0.8Sn_0.2)TiO₄(ZST) film by using Cl₂/O₂-gas plasma

K. H. Kwon
, A. M. Efremov
, G. Y. Yeom
, Y. I. Kang

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

We investigated the etching mechanism of (Zr_0.8Sn_0.2)TiO₄ film by using Cl₂/O₂-gas plasma. To understand the etching mechanism and etching rate behavior from the point of view of internal plasma properties and active particle kinetics, we used the plasma modeling. The data of Langmuir probe measurements and optical emission spectroscopy were used both as input data and model verification parameters etc. We also extracted the etching characteristics of the ZST film such as etch rate and analyzed the surface reaction by using XPS with various Cl₂/O₂-gas mixing ratios. On the basis of plasma modeling and experimental data, we will discuss the mechanism of ZST film etching in detail.

Original language	English
Pages (from-to)	S809-S813
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SUPPL.2
State	Published - Feb 2003
Event	Proceedings of the Joint International Plasma Symposium of 6th APCPST, 15th SPSM, OS 2002 and 11th KAPRA - Jeju Island, Korea, Republic of Duration: 1 Jul 2002 → 4 Jul 2002

Keywords

ICP etching
Langmuir probe
Plasma modeling
XPS
ZST film

Cite this

@article{183704a17a104b80a04131b362d12cb7,

title = "The etching mechanism of (Zr0.8Sn0.2)TiO4(ZST) film by using Cl2/O2-gas plasma",

abstract = "We investigated the etching mechanism of (Zr0.8Sn0.2)TiO4 film by using Cl2/O2-gas plasma. To understand the etching mechanism and etching rate behavior from the point of view of internal plasma properties and active particle kinetics, we used the plasma modeling. The data of Langmuir probe measurements and optical emission spectroscopy were used both as input data and model verification parameters etc. We also extracted the etching characteristics of the ZST film such as etch rate and analyzed the surface reaction by using XPS with various Cl2/O2-gas mixing ratios. On the basis of plasma modeling and experimental data, we will discuss the mechanism of ZST film etching in detail.",

keywords = "ICP etching, Langmuir probe, Plasma modeling, XPS, ZST film",

author = "Kwon, \{K. H.\} and Efremov, \{A. M.\} and Yeom, \{G. Y.\} and Kang, \{Y. I.\}",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S809--S813",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL.2",

note = "Proceedings of the Joint International Plasma Symposium of 6th APCPST, 15th SPSM, OS 2002 and 11th KAPRA ; Conference date: 01-07-2002 Through 04-07-2002",

}

TY - JOUR

T1 - The etching mechanism of (Zr0.8Sn0.2)TiO4(ZST) film by using Cl2/O2-gas plasma

AU - Kwon, K. H.

AU - Efremov, A. M.

AU - Yeom, G. Y.

AU - Kang, Y. I.

PY - 2003/2

Y1 - 2003/2

N2 - We investigated the etching mechanism of (Zr0.8Sn0.2)TiO4 film by using Cl2/O2-gas plasma. To understand the etching mechanism and etching rate behavior from the point of view of internal plasma properties and active particle kinetics, we used the plasma modeling. The data of Langmuir probe measurements and optical emission spectroscopy were used both as input data and model verification parameters etc. We also extracted the etching characteristics of the ZST film such as etch rate and analyzed the surface reaction by using XPS with various Cl2/O2-gas mixing ratios. On the basis of plasma modeling and experimental data, we will discuss the mechanism of ZST film etching in detail.

AB - We investigated the etching mechanism of (Zr0.8Sn0.2)TiO4 film by using Cl2/O2-gas plasma. To understand the etching mechanism and etching rate behavior from the point of view of internal plasma properties and active particle kinetics, we used the plasma modeling. The data of Langmuir probe measurements and optical emission spectroscopy were used both as input data and model verification parameters etc. We also extracted the etching characteristics of the ZST film such as etch rate and analyzed the surface reaction by using XPS with various Cl2/O2-gas mixing ratios. On the basis of plasma modeling and experimental data, we will discuss the mechanism of ZST film etching in detail.

KW - ICP etching

KW - Langmuir probe

KW - Plasma modeling

KW - XPS

KW - ZST film

UR - https://www.scopus.com/pages/publications/0037310466

M3 - Conference article

AN - SCOPUS:0037310466

SN - 0374-4884

VL - 42

SP - S809-S813

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL.2

T2 - Proceedings of the Joint International Plasma Symposium of 6th APCPST, 15th SPSM, OS 2002 and 11th KAPRA

Y2 - 1 July 2002 through 4 July 2002

ER -

The etching mechanism of (Zr_0.8Sn_0.2)TiO₄(ZST) film by using Cl₂/O₂-gas plasma

Abstract

Keywords

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