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The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances

  • Jeong Kyu Kim
  • , Gwang Sik Kim
  • , Hyohyun Nam
  • , Changhwan Shin
  • , Jin Hong Park
  • , Jong Kook Kim
  • , Byung Jin Cho
  • , Krishna C. Saraswat
  • , Hyun Yong Yu
  • Korea University
  • University of Seoul
  • Korea Advanced Institute of Science and Technology
  • Stanford University

Research output: Contribution to journal › Article › peer-review

22   Link opens in a new tab Scopus citations

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