The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances

Jeong Kyu Kim; Gwang Sik Kim; Hyohyun Nam; Changhwan Shin; Jin Hong Park; Jong Kook Kim; Byung Jin Cho; Krishna C. Saraswat; Hyun Yong Yu

doi:10.1109/LED.2014.2364574

The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances

Jeong Kyu Kim
, Gwang Sik Kim
, Hyohyun Nam
, Changhwan Shin
, Jin Hong Park
, Jong Kook Kim
, Byung Jin Cho
, Krishna C. Saraswat
, Hyun Yong Yu

Department of Electronic and Electrical Engineering

Korea University
University of Seoul
Korea Advanced Institute of Science and Technology
Stanford University

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n⁺-IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal-semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n⁺-IL provides much lower contact resistivity, resulting in ~5 × lower contact resistivity than 1 × 10^-8 Ω-cm², specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n⁺-IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration.

Original language	English
Article number	6936878
Pages (from-to)	1185-1187
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	12
DOIs	https://doi.org/10.1109/LED.2014.2364574
State	Published - 1 Dec 2014

Keywords

CMOS
contact resistance
FinFET
germanium
interfacial layer
MOSFET
source/drain

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10.1109/LED.2014.2364574

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@article{b699c2d97d314557954facc931fddc4f,

title = "The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances",

abstract = "We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n+-IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal-semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n+-IL provides much lower contact resistivity, resulting in \textasciitilde{}5 × lower contact resistivity than 1 × 10-8 Ω-cm2, specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n+-IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration.",

keywords = "CMOS, contact resistance, FinFET, germanium, interfacial layer, MOSFET, source/drain",

author = "Kim, \{Jeong Kyu\} and Kim, \{Gwang Sik\} and Hyohyun Nam and Changhwan Shin and Park, \{Jin Hong\} and Kim, \{Jong Kook\} and Cho, \{Byung Jin\} and Saraswat, \{Krishna C.\} and Yu, \{Hyun Yong\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2014",

month = dec,

day = "1",

doi = "10.1109/LED.2014.2364574",

language = "English",

volume = "35",

pages = "1185--1187",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances

AU - Kim, Jeong Kyu

AU - Kim, Gwang Sik

AU - Nam, Hyohyun

AU - Shin, Changhwan

AU - Park, Jin Hong

AU - Kim, Jong Kook

AU - Cho, Byung Jin

AU - Saraswat, Krishna C.

AU - Yu, Hyun Yong

PY - 2014/12/1

Y1 - 2014/12/1

N2 - We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n+-IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal-semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n+-IL provides much lower contact resistivity, resulting in ~5 × lower contact resistivity than 1 × 10-8 Ω-cm2, specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n+-IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration.

AB - We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n+-IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal-semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n+-IL provides much lower contact resistivity, resulting in ~5 × lower contact resistivity than 1 × 10-8 Ω-cm2, specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n+-IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration.

KW - CMOS

KW - contact resistance

KW - FinFET

KW - germanium

KW - interfacial layer

KW - MOSFET

KW - source/drain

UR - https://www.scopus.com/pages/publications/84913597110

U2 - 10.1109/LED.2014.2364574

DO - 10.1109/LED.2014.2364574

M3 - Article

AN - SCOPUS:84913597110

SN - 0741-3106

VL - 35

SP - 1185

EP - 1187

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 6936878

ER -

The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances

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Keywords

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