The Effects of Zn Ratio on the Microstructure Electrical Properties of InGaZnO Films

Haseok Jeon; Sekwon Na; Mi Ran Moon; Donggeun Jung; Hyoungsub Kim; Hoo Jeong Lee

doi:10.1149/1.3615534

The Effects of Zn Ratio on the Microstructure Electrical Properties of InGaZnO Films

Haseok Jeon, Sekwon Na, Mi Ran Moon, Donggeun Jung, Hyoungsub Kim, Hoo Jeong Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

This study examined the effects of the Zn ratio on the microstructure of InGaZnO (IGZO) films and the device performance of their transistors. IGZO films with various Zn ratios were produced by co-sputtering InGaO and ZnO at different ZnO powers. The combination of transmission electron microscopy (TEM) and X-ray diffraction (XRD) analyses elucidated that as the Zn ratio increased from 0 to 0.69, the microstructure changed from amorphous IGZO to nanocrystalline IGZO and then to columnar ZnO. The dynamic transitions of the microstructure, in turn, profoundly affected the electrical properties including the mobility and carrier concentration. The sample with a mixing ratio of 0.25:0.2:0.55 (In:Ga:Zn) exhibited the best performance with a mobility of nearly 30 cm²/Vs.

Original language	English
Pages (from-to)	H949-H954
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	10
DOIs	https://doi.org/10.1149/1.3615534
State	Published - 2011

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title = "The Effects of Zn Ratio on the Microstructure Electrical Properties of InGaZnO Films",

abstract = "This study examined the effects of the Zn ratio on the microstructure of InGaZnO (IGZO) films and the device performance of their transistors. IGZO films with various Zn ratios were produced by co-sputtering InGaO and ZnO at different ZnO powers. The combination of transmission electron microscopy (TEM) and X-ray diffraction (XRD) analyses elucidated that as the Zn ratio increased from 0 to 0.69, the microstructure changed from amorphous IGZO to nanocrystalline IGZO and then to columnar ZnO. The dynamic transitions of the microstructure, in turn, profoundly affected the electrical properties including the mobility and carrier concentration. The sample with a mixing ratio of 0.25:0.2:0.55 (In:Ga:Zn) exhibited the best performance with a mobility of nearly 30 cm2/Vs.",

author = "Haseok Jeon and Sekwon Na and Moon, \{Mi Ran\} and Donggeun Jung and Hyoungsub Kim and Lee, \{Hoo Jeong\}",

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T1 - The Effects of Zn Ratio on the Microstructure Electrical Properties of InGaZnO Films

AU - Jeon, Haseok

AU - Na, Sekwon

AU - Moon, Mi Ran

AU - Jung, Donggeun

AU - Kim, Hyoungsub

AU - Lee, Hoo Jeong

PY - 2011

Y1 - 2011

N2 - This study examined the effects of the Zn ratio on the microstructure of InGaZnO (IGZO) films and the device performance of their transistors. IGZO films with various Zn ratios were produced by co-sputtering InGaO and ZnO at different ZnO powers. The combination of transmission electron microscopy (TEM) and X-ray diffraction (XRD) analyses elucidated that as the Zn ratio increased from 0 to 0.69, the microstructure changed from amorphous IGZO to nanocrystalline IGZO and then to columnar ZnO. The dynamic transitions of the microstructure, in turn, profoundly affected the electrical properties including the mobility and carrier concentration. The sample with a mixing ratio of 0.25:0.2:0.55 (In:Ga:Zn) exhibited the best performance with a mobility of nearly 30 cm2/Vs.

AB - This study examined the effects of the Zn ratio on the microstructure of InGaZnO (IGZO) films and the device performance of their transistors. IGZO films with various Zn ratios were produced by co-sputtering InGaO and ZnO at different ZnO powers. The combination of transmission electron microscopy (TEM) and X-ray diffraction (XRD) analyses elucidated that as the Zn ratio increased from 0 to 0.69, the microstructure changed from amorphous IGZO to nanocrystalline IGZO and then to columnar ZnO. The dynamic transitions of the microstructure, in turn, profoundly affected the electrical properties including the mobility and carrier concentration. The sample with a mixing ratio of 0.25:0.2:0.55 (In:Ga:Zn) exhibited the best performance with a mobility of nearly 30 cm2/Vs.

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DO - 10.1149/1.3615534

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SP - H949-H954

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 10

ER -

The Effects of Zn Ratio on the Microstructure Electrical Properties of InGaZnO Films

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