The effects of thermal annealing in NH3 -ambient on the p-type ZnO films

Eun Soo Jung; Hong Seung Kim; Hyung Koun Cho; Jin Hyeok Kim

doi:10.1016/j.spmi.2007.04.033

The effects of thermal annealing in NH₃ -ambient on the p-type ZnO films

Eun Soo Jung
, Hong Seung Kim
, Hyung Koun Cho
, Jin Hyeok Kim

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Thermal annealing in NH₃-ambient was carried out to form p-type ZnO films. The properties were examined by X-ray diffraction (XRD), Hall-effect measurement, photoluminescence (PL), and secondary ion mass spectrometry (SIMS). Electron concentrations in ZnO films were in the range of 10¹⁵-10¹⁷/cm³ with thermal annealing in NH₃-ambient. The activation thermal annealing process was needed at 800 ^{{ring operator}}C under N₂-ambient to obtain p-type ZnO. The electrical properties of the p-type ZnO showed a hole concentration of 1.06×10¹⁶/cm³, a mobility of 15.8 cm²/V s, and a resistivity of 40.18 Ω cm. The N-doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO. The incorporation of nitrogen was confirmed in the SIMS spectra.

Original language	English
Pages (from-to)	62-67
Number of pages	6
Journal	Superlattices and Microstructures
Volume	42
Issue number	1-6
DOIs	https://doi.org/10.1016/j.spmi.2007.04.033
State	Published - Jul 2007

Keywords

Annealing
NH
p-type doping
ZnO

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.spmi.2007.04.033

Cite this

@article{43565f868f38487284bc8f3b01b5d050,

title = "The effects of thermal annealing in NH3 -ambient on the p-type ZnO films",

abstract = "Thermal annealing in NH3-ambient was carried out to form p-type ZnO films. The properties were examined by X-ray diffraction (XRD), Hall-effect measurement, photoluminescence (PL), and secondary ion mass spectrometry (SIMS). Electron concentrations in ZnO films were in the range of 1015-1017/cm3 with thermal annealing in NH3-ambient. The activation thermal annealing process was needed at 800 \{ring operator\}C under N2-ambient to obtain p-type ZnO. The electrical properties of the p-type ZnO showed a hole concentration of 1.06×1016/cm3, a mobility of 15.8 cm2/V s, and a resistivity of 40.18 Ω cm. The N-doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO. The incorporation of nitrogen was confirmed in the SIMS spectra.",

keywords = "Annealing, NH, p-type doping, ZnO",

author = "Jung, \{Eun Soo\} and Kim, \{Hong Seung\} and Cho, \{Hyung Koun\} and Kim, \{Jin Hyeok\}",

year = "2007",

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doi = "10.1016/j.spmi.2007.04.033",

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issn = "0749-6036",

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TY - JOUR

T1 - The effects of thermal annealing in NH3 -ambient on the p-type ZnO films

AU - Jung, Eun Soo

AU - Kim, Hong Seung

AU - Cho, Hyung Koun

AU - Kim, Jin Hyeok

PY - 2007/7

Y1 - 2007/7

N2 - Thermal annealing in NH3-ambient was carried out to form p-type ZnO films. The properties were examined by X-ray diffraction (XRD), Hall-effect measurement, photoluminescence (PL), and secondary ion mass spectrometry (SIMS). Electron concentrations in ZnO films were in the range of 1015-1017/cm3 with thermal annealing in NH3-ambient. The activation thermal annealing process was needed at 800 {ring operator}C under N2-ambient to obtain p-type ZnO. The electrical properties of the p-type ZnO showed a hole concentration of 1.06×1016/cm3, a mobility of 15.8 cm2/V s, and a resistivity of 40.18 Ω cm. The N-doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO. The incorporation of nitrogen was confirmed in the SIMS spectra.

AB - Thermal annealing in NH3-ambient was carried out to form p-type ZnO films. The properties were examined by X-ray diffraction (XRD), Hall-effect measurement, photoluminescence (PL), and secondary ion mass spectrometry (SIMS). Electron concentrations in ZnO films were in the range of 1015-1017/cm3 with thermal annealing in NH3-ambient. The activation thermal annealing process was needed at 800 {ring operator}C under N2-ambient to obtain p-type ZnO. The electrical properties of the p-type ZnO showed a hole concentration of 1.06×1016/cm3, a mobility of 15.8 cm2/V s, and a resistivity of 40.18 Ω cm. The N-doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO. The incorporation of nitrogen was confirmed in the SIMS spectra.

KW - Annealing

KW - NH

KW - p-type doping

KW - ZnO

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