TY - JOUR
T1 - The effects of annealing temperature on characteristics of UBMS sputtered CNx films for protective coatings
AU - Park, Yong Seob
AU - Boo, Jin Hyo
AU - Hong, Byungyou
PY - 2012/10
Y1 - 2012/10
N2 - The carbon nitride (CNx) films have been prepared by unbalanced magnetron sputtering (UBMS) at room temperature. The deposited CNx films have been post-annealed at temperatures ranging from 300 °C to 700 °C in increments of 200 °C using rapid thermal annealing (RTA) equipment in vacuum ambient. We investigated the effects of rapid thermal annealing on the structural, surface, and physical properties of CNx films for application of protective coatings. As the result, the increasing annealing temperature led to a decline in physical properties of CNx films such as hardness, elastic modulus, adhesion, frication coefficient, and surface roughness, however it is attributed to the improvement of the residual stress in the film. These results are related to the ordering of sp 2 bonded clustering and the increase of disordered graphite domain by the desorption of N contents in the films, Specially, high annealing temperature over 700 °C is attributed to the graphitization of film.
AB - The carbon nitride (CNx) films have been prepared by unbalanced magnetron sputtering (UBMS) at room temperature. The deposited CNx films have been post-annealed at temperatures ranging from 300 °C to 700 °C in increments of 200 °C using rapid thermal annealing (RTA) equipment in vacuum ambient. We investigated the effects of rapid thermal annealing on the structural, surface, and physical properties of CNx films for application of protective coatings. As the result, the increasing annealing temperature led to a decline in physical properties of CNx films such as hardness, elastic modulus, adhesion, frication coefficient, and surface roughness, however it is attributed to the improvement of the residual stress in the film. These results are related to the ordering of sp 2 bonded clustering and the increase of disordered graphite domain by the desorption of N contents in the films, Specially, high annealing temperature over 700 °C is attributed to the graphitization of film.
KW - A. amorphous materials
KW - A. thin films
KW - B. sputtering
KW - C. atomic force microscopy
KW - C. Raman spectroscopy
KW - D. surface properties
UR - https://www.scopus.com/pages/publications/84866336261
U2 - 10.1016/j.materresbull.2012.04.128
DO - 10.1016/j.materresbull.2012.04.128
M3 - Article
AN - SCOPUS:84866336261
SN - 0025-5408
VL - 47
SP - 2776
EP - 2779
JO - Materials Research Bulletin
JF - Materials Research Bulletin
IS - 10
ER -